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Formation of Mn Oxide with Thermal CVD and its Diffusion Barrier Property Between Cu and SiO2
Published online by Cambridge University Press: 01 February 2011
Abstract
A manganese oxide layer was formed by thermal chemical vapor deposition(CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. The thickness of the Mn oxide layer could be varied 2.6 to 10 nm depending on deposition temperature. Heat-treated samples of PVD Cu / CVD Mn oxide /SiO2 indicated no interdiffusion. The CVD Mn oxide was found to be a good diffusion barrier layer.
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- Research Article
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- Copyright © Materials Research Society 2008
References
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