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Formation of Microcrystalline Silicon film by RMS Process

Published online by Cambridge University Press:  21 February 2011

Cheng Wang ,
G.N. Parsons ,
E.C. Buehler ,
R.J. Nemanich  and
G. Lucovsky
Cheng Wang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
G.N. Parsons
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
E.C. Buehler
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

We have deposited microcrystalline, gc-Si, silicon films by using RF reactive magnetron sputtering (RMS) at high substrate temperatures, Ts > 500°C, and at a relatively low partial pressure of hydrogen, PH = 0.40 mTorr, and at low Ts ∼200- 300°C, but with a higher PH > 2 mTorr. We have detected μc-crystallinity by Raman scattering and transmission electron microscopy. We discuss differences in the growth mechanisms for formation of μc-Si under these two deposition conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 21
Copyright
Copyright © Materials Research Society 1990

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