Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T00:19:29.368Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Microcrystalline Silicon film by RMS Process

Published online by Cambridge University Press:  21 February 2011

Cheng Wang ,
G.N. Parsons ,
E.C. Buehler ,
R.J. Nemanich  and
G. Lucovsky
Cheng Wang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
G.N. Parsons
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
E.C. Buehler
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
Get access

Abstract

We have deposited microcrystalline, gc-Si, silicon films by using RF reactive magnetron sputtering (RMS) at high substrate temperatures, Ts > 500°C, and at a relatively low partial pressure of hydrogen, PH = 0.40 mTorr, and at low Ts ∼200- 300°C, but with a higher PH > 2 mTorr. We have detected μc-crystallinity by Raman scattering and transmission electron microscopy. We discuss differences in the growth mechanisms for formation of μc-Si under these two deposition conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 21
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rudder, R.A., Cook, J.W. Jr., and Lucovsky, G., Appl. Phys. Lett. 45, 887(1984).Google Scholar
2. Parsons, G.N., Tsu, D.V. and Lucovsky, G., J. Vac. Sci. Technol. A6, 1912(1988).Google Scholar
3. Wang, Cheng, Parsons, G.N., Buehler, E.C., Lucovsky, G. and Nemanich, R.J., submitted to 1990 Spring MRS Meeting.Google Scholar
4. Nemanich, R.J.et al, ICALS 1989, to be published in J. Non-Cryst. Solids (1989).Google Scholar
5. Veprek, S. and Marecek, V., Solid State Electronics 11, 683(1968)Google Scholar
6. Usi, S. and Kikuchi, M., J. Non-Cryst. Solids 34, 1(1979).Google Scholar
7. Matsuda, A. et al. , Jpn. J. Appl. Phys. 19, L305 (1980).Google Scholar
8. Hamasaki, T. et al. , Appl. Phys. Lett. 37, 1084(1980).Google Scholar
9. Spear, W.E. et al. , J. Physique 42, C.4, 257(1981).Google Scholar
10. Shirafuji, J., Matsui, H., Narukawa, A. and Inuishi, Y., Solid State Comm. 45, 577(1983).Google Scholar
11. Narayan, J., Holland, O.W. and Appleton, B.R., J. Vac. Sci. Technol. B1, 871(1983).Google Scholar
12. Imura, T.et al, Jpn. J. Appl. Phys. 23, 179(1983).Google Scholar