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Formation of Interstitial Defects in High Concentration Shallow Phosphorous Diffusions in Si.

Published online by Cambridge University Press:  15 February 2011

Ralph Jaccodine
Ralph Jaccodine*
Affiliation:
Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015
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Abstract

An experimental study of high concentration (1019 –1021 /cm3 shallow diffusion was undertaken using TEM to investigate the nature of these diffusion-related defects. Phosphorous from a wide variety of sources (PBr3, POCl3, etc.) other than ion implantation was used in temperature range from 950°– 1100°C and for times of 15 minutes to 1 hour. Care was taken in surface preparation and material selection to avoid extraneous defects from sources other than the diffusions.

A high concentration of small dislocation loops (1012/ cm2) was present in the top few microns of the wafers. Diffraction contrast on the loops revealed that they are of edge character with Burger's vector b = ½<110>. Identification of the nature of these loops by tilting method [(g·b)·s] and anomalous dark-faced black-white lobes show they are of the interstitial type, i.e. the observed defects place the surrounding matrix in a compressive state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 101
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Hettick, G., Mehrer, H., and Maier, K., Int. Conf. on Defects and Radiation Effects in Semiconductors, Nice, France (1978);Google Scholar
1a Mayer, H. J., Mehrer, H., and Maier, K., Radiation Effects in Semiconductors (1976) IPO Conf. Ser. #31, Inst. of Physics, Bristol (1977) p. 196.Google Scholar
2. Seeger, A., and Chik, K. P, Phys. Stat. Sol. 29, 455 (1968).Google Scholar
3. deKock, A. J. R., and Van de Wijgert, W., J. Crystal Growth 49, 718 (1980).Google Scholar
3a Petroff, P. M., and de Kock, A. J. R., J. Crystal Growth 35, 4 (1976).Google Scholar
4. Schwettmann, F., and Kendall, D., Appl. Phys. Lett. 21, 3 (1972).Google Scholar
5. Kendall, D. L., and Carpio, R., Fall Mtg., ECS Pittsburgh (1978) RNP #396.Google Scholar
6. Fair, R., “Impurity Doping Processes in Silicon,” Vol. 2, Material Processing Theory and Practices, Wang, F. F. Y., Chapter 7 (North Holland, New York) p. 374.Google Scholar
7. Ashby, M. F., and Brown, L., Phil. Mag. 8, 1083 (1963).CrossRefGoogle Scholar
8. Wilkens, M., Modern Diffraction and Imaging Techniques in Material Science (North Holland, New York, 1970) p. 233.Google Scholar
9. Whelan, Howie, A., M. J., Proc. R. Soc. A263 (1961) p. 217;Google Scholar
9a Proc. R. Soc. A267 (1962) p. 206.Google Scholar
10. Maher, D., and Eyre, B., Phil. Mag. 23, 409 (1971).Google Scholar
11. Das, G., High Voltage Electron Microscopy, Swann, P. R. (Academic Press, 1974) p. 277.Google Scholar
12. Mathews, J., and Van Vechten, J. A., J. Crystal Growth 35, 343 (1976).CrossRefGoogle Scholar
13. Strunk, H., Gösele, U., and Kolbesen, B. O., Appl. Phys. Lett. 34(8), 530 (1979).Google Scholar
14. Gösele, U., and Strunk, H., Appl. Phys. 20, 265 (1979).Google Scholar