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Formation of High-Resistivity Silver-Silicon Dioxide Composite Thin Films Using Sputter Deposition.

Published online by Cambridge University Press:  01 February 2011

Ann Marie Shover ,
James M.E. Harper ,
Nicholas S. Dellas  and
Warren J. MoberlyChan
Ann Marie Shover
Affiliation:
Department of Physics, University of New Hampshire Durham, New Hampshire 03824, USA
James M.E. Harper
Affiliation:
Department of Physics, University of New Hampshire Durham, New Hampshire 03824, USA
Nicholas S. Dellas
Affiliation:
Department of Physics, University of New Hampshire Durham, New Hampshire 03824, USA
Warren J. MoberlyChan
Affiliation:
Center for Imaging and Mesoscale Structures, Harvard University Cambridge, MA 02138, USA
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Abstract

Composite Ag-SiO2 thin films were deposited to examine the stability of materials with high resistivity above 5000 μΩ-cm. We found that the resistivity increases exponentially with SiO2 volume fractions larger than 0.50 which is consistent with a tunneling conductivity mechanism. In order to obtain a broad composition range, these films were deposited on a stationary substrate placed above Ag and SiO2 sputtering sources. This configuration allowed compositions ranging from 0.8 to 56.3% SiO2 to be deposited on the same sample. Resistance measurements were made using a four-point probe and a profilometer was used to measure thickness. Predicted values of thickness and composition were obtained by calibrating deposition rates from the separate sources, and were verified using Rutherford Backscattering Spectroscopy. Electron microscopy analysis revealed Ag agglomerating on the surface of the film. Because of the high mobility of Ag, the films should be capped to prevent Ag agglomeration. The results of this research demonstrate that high-resistivity thin films can be grown using Ag-SiO2 composites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 843: Symposium T – Surface Engineering-Fundamentals and Applications , 2004 , T3.28
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Toker, D., Azulay, D., Shimoni, N., Balberg, I., Millo, O., Phys. Rev. B 68, 041403 (2003).Google Scholar
2. Abeles, B., Pinch, H.L., and Gittleman, J.I., Phys. Rev. Lett. 35, 247, (1975).Google Scholar
3. Cohen, R.W., Cody, G.D., Coutts, M.D., Abeles, B., Phys. Rev. B 8, 3689, (1973)Google Scholar
4. Priestley, E.B., Abeles, B., and Cohen, R.W., Phys. Rev. B 12, 2121 (1975)Google Scholar
5. Stauffer, D. and Aharony, A., in Introduction to Percolation Theory (Taylor and Francis, London, 1992) pp. 10–56.Google Scholar