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Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

Published online by Cambridge University Press:  10 February 2011

S. C. Song ,
C. H. Lee ,
H. F. Luan ,
D. L. Kwong ,
M. Gardner ,
J. Fulford ,
M. Allen ,
J. Bloom  and
R. Evans
S. C. Song
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
C. H. Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
H. F. Luan
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
M. Gardner
Affiliation:
Advanced Micro Devices, Austin, TX 78723
J. Fulford
Affiliation:
Advanced Micro Devices, Austin, TX 78723
M. Allen
Affiliation:
Advanced Micro Devices, Austin, TX 78723
J. Bloom
Affiliation:
GaSonics International, San Jose, CA 95134
R. Evans
Affiliation:
GaSonics International, San Jose, CA 95134
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Abstract

In this paper, we report a novel low thermal budget process (<800°C) for engineered ultra thin oxynitride dielectrics with high nitrogen concentration (>5% a.c.) using vertical high pressure (VHP) process. VHP grown oxynitride films show >1 OX lower leakage current, higher drive current and superior hot-carrier reliability compared to control SiO2 of identical thickness (Tox,eq) grown by RTP in O2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 65
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Lee, D., et al. , J. Vac. Sci. Tech. B 13, 1995, p.1778 Google Scholar
[2] Okada, Y., et al. , VLSI Symp., p. 105, 1994 10.1378/chest.105.2.631Google Scholar
[3] Hori, T., IEEE Trans. Electron Devices, vol. 37, p. 2058, 1990 10.1109/16.57169Google Scholar
[4] Momose, H. S., et al. , IEEE Trans. Electron Devices, vol. 41, p. 546, 1994 10.1109/16.278508Google Scholar
[5] Song, S. C., et al. , IEDM Tech. Dig., p. 373, 1998 Google Scholar
[6] Luan, H. F., et al. , IEDM Tech. Dig., p. 609, 1998 Google Scholar
[7] Patrikar, R. M., et al. , IEEE Electron. Device Lett., vol. 14, p. 530, 1993 10.1109/55.258005Google Scholar
[8] Ogata, T., et al. , IEDM Tech Dig, p.597, 1998 Google Scholar
[9] Kaga, T., et al. , IEEE Trans. Electron Devices, vol. 35, p. 929, 1988 10.1109/16.3347Google Scholar
[10] Song, S. C., et al. , ESSDERC, 1998 Google Scholar