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Formation of Heterogeneous Thickness Modulations During Epitaxial Growth of LPCVD-Si1−xGex/Si Quantum Well Structures

Published online by Cambridge University Press:  25 February 2011

L. Vescan ,
W. Jäger ,
C. Dieker ,
K. Schmidt ,
A. Hartmann  and
H. Lüth
L. Vescan
Affiliation:
ISI and IFF Forschungszentrum Jülich, P.O.B. 1913, D-5170-Jülich, Germany
W. Jäger
Affiliation:
ISI and IFF Forschungszentrum Jülich, P.O.B. 1913, D-5170-Jülich, Germany
C. Dieker
Affiliation:
ISI and IFF Forschungszentrum Jülich, P.O.B. 1913, D-5170-Jülich, Germany
K. Schmidt
Affiliation:
ISI and IFF Forschungszentrum Jülich, P.O.B. 1913, D-5170-Jülich, Germany
A. Hartmann
Affiliation:
ISI and IFF Forschungszentrum Jülich, P.O.B. 1913, D-5170-Jülich, Germany
H. Lüth
Affiliation:
ISI and IFF Forschungszentrum Jülich, P.O.B. 1913, D-5170-Jülich, Germany
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Abstract

Transmission electron microscopy and photoluminescence studies were performed to determine the critical thickness for generation of misfit dislocations in Sil-xGex layers grown by low pressure chemical vapor deposition. Above a certain Ge content the transition from two dimensional to three-dimensional growth occurs before generation of misfit dislocations. For instance, for x ∼0.3 and a substrate temperature around 700°C island formation was observed to start at 1.8 nm. The formation of islands is attributed to the preferential growth of SiGe in areas with less lattice strain. Islands were observed to broaden the exciton photoluminescence of the quantum well structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 23
Copyright
Copyright © Materials Research Society 1992

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References

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