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Formation of GaN Nanocrystal on Si and Its Photoelectrochemical Application

Published online by Cambridge University Press:  15 March 2011

Katsushi Fujii ,
Takashi Kato ,
Keiichi Sato ,
In-Ho Im ,
Ji-Ho Chang  and
Takafumi Yao
Katsushi Fujii
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki Aza Aoba 6-3, Aoba-ku, Sendai, Miyagi 980-8578, JAPAN
Takashi Kato
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki Aza Aoba 6-3, Aoba-ku, Sendai, Miyagi 980-8578, JAPAN
Keiichi Sato
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki Aza Aoba 6-3, Aoba-ku, Sendai, Miyagi 980-8578, JAPAN
In-Ho Im
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki Aza Aoba 6-3, Aoba-ku, Sendai, Miyagi 980-8578, JAPAN
Ji-Ho Chang
Affiliation:
Department of Nano Semiconductor Physics, Korea Maritime University, 1 Dongsam-Dong, Yeong Do-Gu, Busan 606-791, SOUTH KOREA
Takafumi Yao
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki Aza Aoba 6-3, Aoba-ku, Sendai, Miyagi 980-8578, JAPAN
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Abstract

GaN nanodots and nanorods were successfully grown on Si (111) substrates by molecular beam epitaxy. Photocurrent densities of GaN nanodots were quite small compared with thick GaN layer grown by metal-organic vapor phase epitaxy. The current density, however, increases with GaN nanodot density. The highest photocurrent density of the GaN nanodots was higher than that of the layer structure with similar thickness (up to 10 nm) to the nanodot height. GaN nanorods have much higher photocurrent density than that of GaN nanodots. Enough nanostructure size for light absorption is important to achieve good photoelectrochemical performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1127: Symposium T – Mobile Energy , 2008 , 1127-T04-01
Copyright
Copyright © Materials Research Society 2009

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References

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