Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-05T16:27:34.421Z Has data issue: false hasContentIssue false

Formation of Ga2O3 barrier layer in Cu(InGa)Se2 superstrate devices with ZnO buffer layer

Published online by Cambridge University Press:  28 August 2013

Jes K. Larsen
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE, 19716, USA
Peipei Xin
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE, 19716, USA
William N. Shafarman
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE, 19716, USA
Get access

Abstract

The junction formation when Cu(InGa)Se2 is deposited onto ZnO in a superstrate configuration (glass/window/buffer/Cu(InGa)Se2/contact) is investigated by x-ray photoelectron spectroscopy and analysis of device behavior. When Cu(InGa)Se2 is deposited on ZnO, a Ga2O3 layer is formed at the interface. Approaches to avoid the formation of this unfavorable interlayer are investigated. This includes modifications of the process to reduce the thermal load during deposition and improvement of the thermal stability of the ZnO buffer layer. It was demonstrated that both lowering of the substrate deposition temperature and deposition of the ZnO buffer layer at elevated temperature limits the Ga2O3 formation. The presence of Ga2O3 at the junction does affect the device behavior, resulting in a kink in JV curves measured under illumination. This behavior is absent in devices with limited Ga2O3 formation.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Yoshida, T. and Birkmire, R.W., Proc. 11th European Communities Photovoltaic Solar Energy Conf. 811, 811 (1992).Google Scholar
Nakada, T., Mise, T., Kume, T., and Kunioka, A., 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion 413 (1998).Google Scholar
Nakada, T. and Mise, T., Proceedings of the 17th E.C. Photovoltaic Solar Energy Conference 1027 (2001).Google Scholar
Nakada, T., Thin Solid Films 480481, 419 (2005).CrossRefGoogle Scholar
Terheggen, M., Heinrich, H., Kostorz, G., Haug, F.-J., Zogg, H., and Tiwari, A.. N., Thin Solid Films 403404, 212 (2002).CrossRefGoogle Scholar
Robertson, J., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, 1785 (2000).CrossRefGoogle Scholar
Scheer, R. and Schock, H.W., Chalcogenide Photovoltaics: Physics, Technologies, and Thin Film Devices (Wiley-VCH, 2011).CrossRefGoogle Scholar
Wilson, J.D., Birkmire, R.W., and Shafarman, W.N., in 2008 33rd IEEE Photovolatic Specialists Conference (IEEE, 2008), pp. 1–5.Google Scholar
Wagner, C.W., Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics Division, Perkin-Elmer Corp., 1979).Google Scholar
Minemoto, T., Matsui, T., Takakura, H., Hamakawa, Y., Negami, T., Hashimoto, Y., and Uenoyama, T., Solar Energy Materials & Solar Cells 67, 83 (2001).CrossRefGoogle Scholar
Rudmann, D., da Cunha, A.F., Kaelin, M., Kurdesau, F., Zogg, H., Tiwari, A.N., and Bilger, G., Applied Physics Letters 84, 1129 (2004).CrossRefGoogle Scholar
Hegedus, S.S. and Shafarman, W.N., Progress in Photovoltaics: Research and Applications 12, 155 (2004).CrossRefGoogle Scholar