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Formation of Extrinsic Defects at the Amorphouscrystalline Interface in Ion-Implanted Silicon

Published online by Cambridge University Press:  21 February 2011

M. Seibt ,
J. Imschweiler  and
H.-A. Hefner
M. Seibt
Affiliation:
IV. Physikalisches Institut der Georg-AugustUniversität Göttingen, Bunsenstr.13-15, D-37073 Göttingen, Federal Republic of, Germany
J. Imschweiler
Affiliation:
TEMIC, TELEFUNKEN microelectronic, GmbH, Theresienstr.2, D-74072 Heilbronn, Federal Republic of, Germany
H.-A. Hefner
Affiliation:
TEMIC, TELEFUNKEN microelectronic, GmbH, Theresienstr.2, D-74072 Heilbronn, Federal Republic of, Germany
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Abstract

We have used high-resolution electron microscopy to examine structural changes in the amorphous - crystalline interfacial region in Ge implanted silicon due to annealing at 450°C. We observe the removal of strain in the crystalline part of the interface and a strong decrease of interfacial roughness due to annealing. In addition, we observe the nucleation of interstitial type extended defects in the crystalline region beneath the interface. These grow into {113} - stacking faults during subsequent solid-phase epitaxial regrowth. By measuring the size and density distribution of these defects we estimate the concentration profile of silicon self-interstitials in the crystalline substrate of implanted silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 189
Copyright
Copyright © Materials Research Society 1994

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