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Published online by Cambridge University Press: 21 February 2011
We have used high-resolution electron microscopy to examine structural changes in the amorphous - crystalline interfacial region in Ge implanted silicon due to annealing at 450°C. We observe the removal of strain in the crystalline part of the interface and a strong decrease of interfacial roughness due to annealing. In addition, we observe the nucleation of interstitial type extended defects in the crystalline region beneath the interface. These grow into {113} - stacking faults during subsequent solid-phase epitaxial regrowth. By measuring the size and density distribution of these defects we estimate the concentration profile of silicon self-interstitials in the crystalline substrate of implanted silicon.