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Formation of End-of-Range Defects in Silicon at Low Temperatures

Published online by Cambridge University Press:  26 February 2011

M. Seibt ,
J. Imschweiler  and
H. -A. Heftier
M. Seibt
Affiliation:
IV. Physikalisches Institut der Universitå't G öttingen, Bunsenstr. 13–15, 3400 Göttingen, Federal Republic of Germany
J. Imschweiler
Affiliation:
TELEFUNKEN electronic GmbH, Theresienstr.2, 7100 Heilbronn, Federal Republic of Germany
H. -A. Heftier
Affiliation:
TELEFUNKEN electronic GmbH, Theresienstr.2, 7100 Heilbronn, Federal Republic of Germany
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Abstract

We have used high resolution transmission electron microscopy to study the formation of end- of- range defects after pre- amorphization due to Ge+ - implantation and subsequent furnace annealing at temperatures below 550 C. It is shown that depending on the annealing conditions two types of extrinsic stacking faults (SFs) are formed, i.e. {113}- defects or Frank- type {111} SFs. We present a scheme allowing the controlled deposition of Si self- interstitials into {113}- defects, which can be removed more easily than Frank type SFs during subsequent RTA under constraints of low thermal budget.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1103
Copyright
Copyright © Materials Research Society 1992

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References

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