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The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth

Published online by Cambridge University Press:  26 February 2011

Y. Tsumori ,
K. Nakai ,
T. Iwasaki ,
H. Haga ,
K. Kojima  and
T. Nakashizu
Y. Tsumori
Affiliation:
Nippon Steel Corp., Electronics Research Labs., Shimata, Hikari, Yamaguchi 743, Japan
K. Nakai
Affiliation:
Nippon Steel Corp., Electronics Research Labs., Shimata, Hikari, Yamaguchi 743, Japan
T. Iwasaki
Affiliation:
Nippon Steel Corp., Electronics Research Labs., Shimata, Hikari, Yamaguchi 743, Japan
H. Haga
Affiliation:
Nippon Steel Corp., Electronics Research Labs., Shimata, Hikari, Yamaguchi 743, Japan
K. Kojima
Affiliation:
NSC Electron Corp., Shimata, Hikari, Yamaguchi 743, Japan
T. Nakashizu
Affiliation:
NSC Electron Corp., Shimata, Hikari, Yamaguchi 743, Japan
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Abstract

The formation of grown-in defects degrading the gate oxide integrity (GOI) has been studied. The growth-halting experiments were carried out to investigate the temperature ranges at which the formation of the defects was promoted or suppressed. GOI is improved in the crystal regions slowly cooled above 1330°C and between 1060°C and 1100°C. It is degraded in the crystal regions held below 1060°C. In the peripheral of the crystals, those temperature ranges are about 30°C lower. The defects are formed and grown below 1060°C in the center part of the crystal. The defect density is decreased with cooling time between 1060°C and 1100°C. These phenomena are considered to be closely related with reactions of intrinsic point defects, that is, the pair annihilation or the aggregation. The temperatures at which the pair annihilation and the aggregation of the point defects occur are dependent upon the supersaturation of the point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 23
Copyright
Copyright © Materials Research Society 1995

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