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Formation of Continuous Nanometer PtSi Thin Film on Si by Pulsed Laser Deposition (PLD)

Published online by Cambridge University Press:  10 February 2011

Meicheng Li ,
Xuekang Chen ,
Jing Wang ,
Jianping Yang ,
Zhanxu Lei ,
Gan Wu  and
Liancheng Zhao
Meicheng Li
Affiliation:
School of Materials Science and Engineering, Harbin Institute of Technology, P.O.433, Harbin, P. R. China 15001, [email protected]
Xuekang Chen
Affiliation:
Laboratory of Laser Molecular Beam Epitaxy, Lanzhou Institute of Physics, Lanzhou, P. R. China 730000
Jing Wang
Affiliation:
Laboratory of Laser Molecular Beam Epitaxy, Lanzhou Institute of Physics, Lanzhou, P. R. China 730000
Jianping Yang
Affiliation:
Laboratory of Laser Molecular Beam Epitaxy, Lanzhou Institute of Physics, Lanzhou, P. R. China 730000
Zhanxu Lei
Affiliation:
Laboratory of Laser Molecular Beam Epitaxy, Lanzhou Institute of Physics, Lanzhou, P. R. China 730000
Gan Wu
Affiliation:
Laboratory of Laser Molecular Beam Epitaxy, Lanzhou Institute of Physics, Lanzhou, P. R. China 730000
Liancheng Zhao
Affiliation:
School of Materials Science and Engineering, Harbin Institute of Technology, P.O.433, Harbin, P. R. China 15001, [email protected]
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Abstract

Metal-based silicides on silicon substrates are a widely used material system for infrared detection. PtSi/p-Si infrared Schottky barrier detectors (IRSBD) have become one of the most successful photoemisive infrared detectors. Till now, most of the efforts have been focused on the design of two dimensional PtSi-SBD arrays for the infrared (IR) camera. In this paper, we discussed the formation conditions of PtSi. Qualities are compared for PtSi films prepared at different conditions including different annealing sequences, annealing time, film thickness, and annealing ambient using pulsed laser deposition on various temperature substrates. Film structures and compositions, phase's formation using different processes are analyzed. By studying the kinetics of PtSi formation during various annealing processing, preferable preparing conditions are proposed to form the continuous PtSi ultra-thin film on Si substrate by PLD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 21
Copyright
Copyright © Materials Research Society 2000

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References

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