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Formation of a-Si:H Film by p-CVD Method with SiH4-He Mixture and its Opto-Electronic Properties

Published online by Cambridge University Press:  15 February 2011

Youichi Nakamura ,
Tsuyoshi Yamaguchi  and
Atsushi Okagawa
Youichi Nakamura
Affiliation:
Nippon Institute of Technology, Department of Systems Engineering, Miyashiro, Minami-saitama, Saitama, 345, JAPAN
Tsuyoshi Yamaguchi
Affiliation:
Nippon Institute of Technology, Department of Systems Engineering, Miyashiro, Minami-saitama, Saitama, 345, JAPAN
Atsushi Okagawa
Affiliation:
Nippon Institute of Technology, Department of Systems Engineering, Miyashiro, Minami-saitama, Saitama, 345, JAPAN
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Abstract

Formation of hydrogenated amorphous silicon (a-Si:H) was carried out by rf glow discharge method in the reactive gas systems of silane. By preliminary experiments on a-Si:H for helium dilution, a relatively high deposition rate up to 2–3 μm/hr was obtained. In order to investigate the opto-electronic properties on a-Si:H films due to different dilution of helium or hydrogen, measurements on optical band gap Eop, electric conductivity and FT-IR were done. Optical emission spectra were also observed. Optical band gap value Eop on a-Si:H film for SiH4 (10%) -He (90%) was nearly constant about 1.73 eV, while that for SiH4 (10%) -H2 (90%) was increased from 1.75 eV to 1.78 eV with increase of residence time of silane molecule and it was relatively high. From the experimental results of FT-IR, ratio of bonding mode of SiH to (SiH+SiH2) for hydrogen dilution was about 90% and higher than that for helium dilution, while hydrogen concentration in the film for SiH4 (10%) -H2 (90%) was less than 10% and that for SiH4 (10%) -He (90%) was 20–30%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 21
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Knights, J.C., Lujan, R.A., Rosenblum, M.P., Street, R.A., Dieglesem, D.K. and Reiner, J.A., Appl. Phys. Lett. 38 (1983) 331.Google Scholar
2. Nakamura, Y. and Kutsuwada, N., IS&T Proceedings of 8th Int'l Congress on Advances in Non-impact Printing Technologies, Oct. 25–30,1992. Williamsburg VA p.250.Google Scholar
3. Ikeda, A., Kawakami, T., Ejima, K., Itoh, B., Sasaki, T., Shimono, Y. and Wakita, K., IS&T Proceedings of 8th Int'l Congress on Advances in Non-impact Printing Technologies, Oct. 25–30, 1992. Williamsburg VA p. 257.Google Scholar
4. Kampas, F.J., J. Appl. Phys. 53 (1982) 6408.Google Scholar
5. Tanaka, K. and Matsuda, A., Mater. Sci. Rep. 2 (1987) 139.Google Scholar
6. Lin, G.H., Doyle, J.R., He, M. and Gallagher, A., J. Appl. Phys. 64 (1988) 188.Google Scholar
7. Perrin, J., Solomon, I., Bourdon, B., Fontenille, J. and Ligeon, E., Thin Solid Films 62 (1979) 327.Google Scholar
8. Shirai, H., Das, D., Hanna, J. and Shimizu, I., Technical Digest of the Int'l PVSEC-5, Kyoto, Japan (1990) p. 59.Google Scholar