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Formation of a Thermally Stable NiSi FUSI Gate Electrode by a Novel Integration Process

Published online by Cambridge University Press:  01 February 2011

Shiang Yu Tan
Affiliation:
[email protected], Chinese Culture University, Department of Electrical Engineering, Department of Electrical Engineering, Chinese Culture University, Taipei 111, Taiwan, ROC, Taipei, 111, Taiwan, +886 972172847, +886 2 28625230
Hsien-Chia Chiu
Affiliation:
Chinese Culture University, Graduate Institute of Materials Science and Nanotechnology, 55, Hwa-Kang Road, Yang-Ming-Shan, Taipei, 11114, Taiwan
Chun-Yen Hu
Affiliation:
Chinese Culture University, Graduate Institute of Materials Science and Nanotechnology, 55, Hwa-Kang Road, Yang-Ming-Shan, Taipei, 11114, Taiwan
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Abstract

Nickel silicide is promising to be the choice material as contact to the source, drain, and gate for sub-65 nm and 45 nm CMOS devices. However, the thermal stability of NiSi is worse as the high resistivity phase of NiSi2 nucleates at about 750 °C and film agglomeration occurs even at a temperature as low as 600 °C. The process integration issues and formation thermally stable NiSi are needed to be understood and addressed. In order to obtain a thermally stable Ni-FUSI gate electrode, we introduced a novel integration process by using a two-step anneal process associating with properly tuned thickness of the initial Ni film and implant BF2 atoms during the poly-gate formation. As results, push the transformation of NiSi2 to a higher temperatures at about 900 °C. Several measurement techniques such as XRD, TEM, SEM and Resistivity are carried out to demonstrate its physical and electrical properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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