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Formation of a single In(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources

Published online by Cambridge University Press:  21 May 2012

J. Tatebayashi ,
Y. Ota ,
D. Karunathillake ,
S. Ishida ,
M. Nishioka ,
S. Iwamoto  and
Y. Arakawa
J. Tatebayashi
Affiliation:
NanoQUINE, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN
Y. Ota
Affiliation:
NanoQUINE, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN
D. Karunathillake
Affiliation:
NanoQUINE, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN Institute of Industrial Science, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN
S. Ishida
Affiliation:
NanoQUINE, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN Institute of Industrial Science, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN
M. Nishioka
Affiliation:
NanoQUINE, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN Institute of Industrial Science, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN
S. Iwamoto
Affiliation:
NanoQUINE, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN Institute of Industrial Science, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN
Y. Arakawa
Affiliation:
NanoQUINE, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN Institute of Industrial Science, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, JAPAN
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Abstract

We report the formation and optical properties of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition for application to single photon sources. InAs/GaAs QD-in-NWs with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μeV are observed. Light emission from the single QD-in-NW shows photon antibunching which evidences single photon emission from high-quality QD-in-NWs.

Keywords

III-Vnanostructuremetalorganic deposition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 115 - 119
Copyright
Copyright © Materials Research Society 2012

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