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Formation of a miscibility gap in laser-crystallized poly-SiGe thin films

Published online by Cambridge University Press:  01 February 2011

M. Weizman ,
N. H. Nickeal ,
I. Sieber  and
B. Yan
M. Weizman
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, 12489 Berlin,Germany
I. Sieber
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, 12489 Berlin,Germany
B. Yan
Affiliation:
United Solar Systems Corp. 1100 West Maple Road Troy, MI 48084, USA
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Abstract

Laser-crystallized polycrystalline silicon-germanium (poly-SiGe) thin films on glass substrates were characterized with energy dispersive X-ray and Raman spectroscopy. In the course of the crystallization strong lateral segregation occurs for laser-crystallized poly-Si1-xGex with 0.33 < x < 0.7, causing the local Ge content to differ by as much as 40 % from the average value. The segregation manifests itself in the appearance of well-resolved peaks in the Raman phonon modes. This mode splitting in the Raman spectra is interpreted as the formation of well defined alloy phases with a miscibility gap in between.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A2.5
Copyright
Copyright © Materials Research Society 2005

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