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Formation Mechanism Of Negative Fixed Charge In Glass At Lead Glass/Silicon Interface

Published online by Cambridge University Press:  10 February 2011

Susumu Murakami ,
Hitoshi Matsuzaki ,
Mitsuyuki Matsuzaki ,
Masao Tsuruoka  and
Minoru Kanno
Susumu Murakami
Affiliation:
Hitachi Research Lab., Hitachi Ltd., Hitachi, Ibaraki, 319–12 Japan
Hitoshi Matsuzaki
Affiliation:
Hitachi Works, Hitachi Ltd., Hitachi, Ibaraki, 317 Japan
Mitsuyuki Matsuzaki
Affiliation:
Hitachi Works, Hitachi Ltd., Hitachi, Ibaraki, 317 Japan
Masao Tsuruoka
Affiliation:
Hitachi Works, Hitachi Ltd., Hitachi, Ibaraki, 317 Japan
Minoru Kanno
Affiliation:
Hitachi Haramachi Electronics, Co, Ltd., Haramachi, Fukusima, 975 Japan
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Abstract

The physical origins of negative fixed charges at the lead glass/silicon interface have been studied. It was found that a thin p-type region is present on the n-type substrate in the PbO-SiO2-Al2O3 glass/silicon system from the punch-through voltage, pinch-off voltage, and SIMS analysis. A new model of the negative fixed charge was proposed from the MIS structure with the surface pn junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 135
Copyright
Copyright © Materials Research Society 1998

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