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The Formation Mechanism of Carrot Defects in SiC Epifilms

Published online by Cambridge University Press:  01 February 2011

Hui Chen ,
Guan Wang ,
Yi Chen ,
Xiaoting Jia ,
Jie Bai  and
Michael Dudley
Hui Chen
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, 314 Old Engineering, Stony Brook University, Stony Brook, NY, 11794-2275, United States, 631-632-8501, 631-632-8052
Guan Wang
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Yi Chen
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Xiaoting Jia
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Jie Bai
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Michael Dudley
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
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Abstract

Carrot-like defects in a 7 off-cut (from [0001] toward <1-210> direction) 4H-SiC wafer with a 36μm thick 4H-SiC epilayer have been investigated using Nomarski optical microscopy, synchrotron white beam x-ray topography (SWBXT), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). X-ray topographs confirm that threading screw dislocations are often associated with the carrots. Cross-sectional TEM observation confirms that a prismatic stacking fault exists below the carrot. This fault was found to show contrast in all observed diffraction geometries except for g=0004. A model for the mechanism of formation of this type of defect during epitaxial growth is proposed.

Keywords

defectscrystaldislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B05-24
Copyright
Copyright © Materials Research Society 2006

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References

1 Si, W., Dudley, M., Kong, H., et al., J. Electron. Mater., 26, 3 (1997).Google Scholar
2 Kimoto, T., Miyamoto, N. and Matsunami, H., IEEE Transactions on Electron Devices, 46, 3 (1999).Google Scholar
3 Okada, T., Kimoto, T., Yamai, Keita, et.al., Mater. Sci. &. Eng., A361, 67 (2003).Google Scholar
4 Okada, T., Kimoto, T., Noda, H.,et.al., Jpn. J. Appl. Phys., 41, 6320 (2002).Google Scholar
5 Zhang, X., Ha, S., Benamara, M., et.al., Appl.Phys.Lett., 85, 22 (2004).Google Scholar
6 Benamara, M., Zhang, X., and Skowronski, M., Appl.Phys.Lett., 86, 021905 (2005).Google Scholar
7 Wang, Y., Ali, G. N., Mikhov, M. K., et al., J. Appl. Phys., 97, 013540 (2005).Google Scholar
8 Northrup, J. E., Appl. Phys. Lett. 72, 18 (1998).Google Scholar