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Formation and Transformation of Amorphous Silicide Alloys

Published online by Cambridge University Press:  21 February 2011

K.N. Tu ,
T. Tien  and
S.R. Herd
K.N. Tu
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218 Yorktown Heights, N.Y. 10598, U.S.A.
T. Tien
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218 Yorktown Heights, N.Y. 10598, U.S.A.
S.R. Herd
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218 Yorktown Heights, N.Y. 10598, U.S.A.
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Abstract

Amorphous silicide films can be formed by rapid quenching using techniques of vapor deposition and ion beam mixing and also by slow heating using solid state interdiffusion and reaction. For example, amorphous TaSi2 films can be formed by sputtering or dual electron guns co-deposition. Amorphous Pt2Si3 films have been produced by mixing PtSi and Si at room temperature with an ion beam at about 100 to 300keV. Recently, an amorphous Rh-Si alloy phase has been made by slowly heating to 300°C a very thin crystalline Rh films (∼50Å) on amorphous Si. The formation and crystallization behavior of these amorphous silicide alloys has been studied by transmission electron microscopy and electrical conductivity measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 201
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Duwez, P., Williams, R. and Crewdson, R., J. Appl. Phys. 36, 2267 (1965).Google Scholar
2. Mader, S. and Nowick, A.S., Acta Metall. 15, 215 (1967).CrossRefGoogle Scholar
3. Tsaur, B.Y., in “Thin Film Interfaces and Interactions” edited by Baglin, J.E.E. and Poate, J.M., Electrochemical Society Proceedings Vol. 80–2, p. 205 (1980).Google Scholar
4. Poate, J.M., chapter 6 in “Preparation and properties of Thin Films”, edited by Tu, K.N. and Rosenberg, R., Academic Press, New York (1982).Google Scholar
5. Herd, S., Tu, K.N. and Ahn, K.Y., Appl. Phys. Lett. 42, 597 (1983).Google Scholar
6. Schwarz, R.B. and Johnson, W.L., Phys. Rev. Lett., 51, 415 (1983).Google Scholar
7. Tien, T., Ottaviani, G. and Tu, K.N., J. Appl. Phys. 54, 7074 (1983).Google Scholar
8. Tsaur, B.Y., Mayer, J.W. and Tu, K.N., J. Appl. Phys. 51, 5326 (1980).Google Scholar
9. Tsaur, B.Y., Mayer, J.W., Graczyk, J.F. and Tu, K.N., J. Appl. Phys, 51, 5334 (1980).CrossRefGoogle Scholar
10. Graczyk, J.F., Tu, K.N., Tsaur, B.Y. and Mayer, J.W., J. Appl. Phys. 53, 6772 (1982).Google Scholar
11. Tu, K.N., Thompson, R.D. and Herd, S.R., unpublished.Google Scholar