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Formation and Properties of Three Copper Pairs in Silicon

Published online by Cambridge University Press:  01 February 2011

S.K. Estreicher ,
D. West ,
J.M. Pruneda ,
S. Knack  and
J. Weber
S.K. Estreicher
Affiliation:
Physics Department, Texas Tech University, Lubbock, TX 79409-1051, USA
D. West
Affiliation:
Physics Department, Texas Tech University, Lubbock, TX 79409-1051, USA
J.M. Pruneda
Affiliation:
Department of Earth Sciences, University of Cambridge, Cambridge CB2 3EQ, UK
S. Knack
Affiliation:
Institut für Tieftemperaturphysik, TU Dresden, 01062 Dresden, Germany
J. Weber
Affiliation:
Institut für Tieftemperaturphysik, TU Dresden, 01062 Dresden, Germany
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Abstract

Copper in silicon is a feared contaminant in device processing. It diffuses quickly as an interstitial and forms electrically active precipitates that are difficult to dissolve. Several complexes assigned to copper pairs have been observed but have yet to be unambiguously identified and fully characterized. We present the results of joint theoretical-experimental studies of several pair structures. The theoretical work involves ab-initio molecular-dynamics simulations, and the results include configurations, binding energies, electronic structures, vibrational modes and formation dynamics. The experimental work combines electrical and optical techniques. One characteristic of the photoluminescence spectra is the presence of phonon replicas that imply the existence of very similar low-frequency and localized vibrational modes in two distinct copper pairs. These modes are theoretically identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F13.9
Copyright
Copyright © Materials Research Society 2002

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