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Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing

Published online by Cambridge University Press:  17 March 2011

K.Y. Lee ,
S.L. Liew ,
S.J. Chua ,
D.Z. Chi ,
H.P. Sun  and
X.Q. Pan
K.Y. Lee
Affiliation:
Institute of Materials Research and Engineering, Singapore
S.L. Liew
Affiliation:
Institute of Materials Research and Engineering, Singapore
S.J. Chua
Affiliation:
Institute of Materials Research and Engineering, Singapore
D.Z. Chi
Affiliation:
Institute of Materials Research and Engineering, Singapore
H.P. Sun
Affiliation:
Department of Materials Science, University of Michigan, Ann Arbor, Michigan, USA.
X.Q. Pan
Affiliation:
Department of Materials Science, University of Michigan, Ann Arbor, Michigan, USA.
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Abstract

Phase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C2.4
Copyright
Copyright © Materials Research Society 2004

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References

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