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Formation and Evolution of InAs Nanowires on an InP(001) Surface

Published online by Cambridge University Press:  10 February 2011

Haeyeon Yang ,
J. B. Smathers ,
P. Ballet ,
C. L. Workman  and
G. J. Salamo
Haeyeon Yang
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
J. B. Smathers
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
P. Ballet
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
C. L. Workman
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
G. J. Salamo
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
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Abstract

We have used in-situ scanning tunneling microscopy (STM) to study the formation and evolution of InAs islands on an InP (001) surface. The InAs islands are produced by (i) exchange of P-atoms with As-atoms or by (ii) direct deposition of In and As. In both cases InAs nanowires arem elongated along the [ī 10] direction with a length over 1 µm. We observe these nanowires to be stable under an arsenic environment while unstable with no arsenic flux, and eventually transform into a rectangular-based pyramid with a truncated top. These observations indicate that surface reconstruction can play a role in the selection of quantum wire or dot growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 141
Copyright
Copyright © Materials Research Society 2000

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References

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