Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-23T16:39:44.344Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation and Characterization of Striped Nano-Channel Structure on the Functional Oxide Thin Film

Published online by Cambridge University Press:  01 February 2011

Masayasu Kasahara ,
Akifumi Matsuda ,
Yasuyuki Akita ,
Wakana Hara ,
Keisuke Kobayashi ,
Kazuyoshi Kobayashi ,
Toshimasa Suzuki  and
Mamoru Yoshimoto
Masayasu Kasahara
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6,Nagatsuta,Midori, Yokohama, 226-8503, Japan, +81-45-924-5331, 81-45-924-5365
Akifumi Matsuda
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6,Nagatsuta,Midori, Yokohama, 226-8503, Japan, +81-45-924-5331, 81-45-924-5365
Yasuyuki Akita
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6, Nagatsuta, Midori, Yokohama, 226-8503, Japan
Wakana Hara
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6, Nagatsuta, Midori, Yokohama, 226-8503, Japan
Keisuke Kobayashi
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6, Nagatsuta, Midori, Yokohama, 226-8503, Japan
Kazuyoshi Kobayashi
Affiliation:
[email protected], Taiyo Yuden Co.Ltd., 5607-2, Nakamurota, Takasaki, 370-3347, Japan
Toshimasa Suzuki
Affiliation:
[email protected], Taiyo Yuden Co.Ltd., 5607-2, Nakamurota, Takasaki, 370-3347, Japan
Mamoru Yoshimoto
Affiliation:
[email protected], Taiyo Yuden Co.Ltd., 5607-2, Nakamurota, Takasaki, 370-3347, Japan
Get access

Abstract

The striped nano-channel structure (about 10nm in depth) was formed on the NiO film surface by thermal annealing of the film deposited on the sapphire(0001) substrate with periodic straight atomic steps. The interval of each nano-channel was about 100nm in average and well corresponding to the separation of atomic steps on the used sapphire(0001) substrate. Effects of annealing temperature and impurity doping into NiO upon the nanochannel formation were examined in order to control the depth. The depth of nano-channels formed on the alkali-metal(Li or Na) doped NiO films were found to be larger than that of nano-channels on the non-doped NiO films and enlarged with increasing annealing temperature in the range of 500∼900°C. Atomic-scale cross sectional structure of the nano-channel was characterized by transmission electron microscopy with focused on the film/substrate interface.

Keywords

defectsnanostructureself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 961: Symposium O – Nanostructured and Patterned Materials for Information Storage , 2006 , 0961-O15-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wang, D.F., Ono, T. and Esashi, M., Nanotechnology 15 1851 (2004)Google Scholar
2. Chou, S.Y., Krauss, P.R. and Renstrom, P.J., Science 272 85 (1996)Google Scholar
3. Klehn, B. and Kunze, U., J. Appl. Phys. 85 3897 (1999)Google Scholar
4. Sasaki, A., Akiba, S., Matsuda, A., Hara, W., Sato, S. and Yoshimoto, M., Jpn.J.Appl.Phys. 44 L256 (2005)Google Scholar
5. Yoshimoto, M., Maeda, T., Ohnishi, T., Koinuma, H., Ishiyama, O., Shinohara, M., Kubo, M., Miura, R. and Miyamoto, A., Appl. Phys. Lett. 67 2615 (1995)Google Scholar
6. Kawasaki, M., Takahashi, K., Maeda, T., Tsuchiya, R., Shinohara, M., Ishiyama, O., Yonezawa, T., Yoshimoto, M. and Koinuma, H., Science 266 1540 (1994)Google Scholar
7. Jiang, J.C., Lin, Y., Chen, C.L., Chu, C.W. and Meletis, E.I., J. Appl. Phys. 91 3188 (2002)Google Scholar
8. Wen, J.G., Traeholt, C. and Zandbergen, H.W., Physica C 205 354 (1993)Google Scholar
9. Ramesh, R., Inam, A., Hwang, D.W.. Ravi, T.S., Sands, T., Xi, X.X., Wu, X.D., Li, Q., Venkatesan, T. and Kilaas, R., J. Mater. Res. 6 2264 (1991)Google Scholar
10. Akiba, S., Matsuda, A., Isa, H., Kasahara, M., Sato, S., Watanabe, T., Hara, W. and Yoshimoto, M., Nanotechnology 17 4053 (2006)Google Scholar
11. Kakei, Y., Nakao, S., Satoh, K. and Kusaka, T., J. Cryst. Growth 237–239 591 (2002)Google Scholar
12. Taguchi, H., Solid State Comm. 108 635 (1998)Google Scholar
13. Kasper, J. S. and Prener, J. S., Acta Cryst. 7 246 (1954)Google Scholar
14. Porta, P., Minelli, G., Botto, I.L. and Baran, E.J., J. Solid State Chem. 92 202 (1991)Google Scholar