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Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

Published online by Cambridge University Press:  03 September 2012

M. Kuball ,
M. Benyoucef ,
F.H. Morrissey  and
C.T. Foxon
M. Kuball
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
M. Benyoucef
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
F.H. Morrissey
Affiliation:
Philips Electron Optics BV, Eindhoven, Netherlands
C.T. Foxon
Affiliation:
Department of Physics, University of Nottingham, Nottingham NG7 2RD, UK
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Abstract

We report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W12.3
Copyright
Copyright © Materials Research Society 1999

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