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Fluorine Incorporation and Annealing Properties of a-Si, Ge:H, F Alloys Studied by Elastic Proton Scattering and Ir Absorption

Published online by Cambridge University Press:  28 February 2011

R. Schwarz ,
Y. Okada ,
S. F. Chou ,
J. Kolodzey ,
D. Slobodin  and
S. Wagner
R. Schwarz
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544.
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544.
S. F. Chou
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544.
J. Kolodzey
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544.
D. Slobodin
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544.
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544.
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Abstract

We report precise measurements of the fluorine content cF in amorphous silicongermanium alloy films (a-Si, Ge:H, F). The films were prepared by r.f. or d.c. glow discharge deposition. The fluorine concentration was measured by elastic scattering (NES) of 12 MeV protons and by IR absorption spectroscopy. Films measured by NES serve as calibration standards for other measurement techniques. Using the NES measurements, we update the published calibration coefficient for IR measurements for cF ranging from 0 to 10 at.%. The annealing properties up to 700°C of a-Si, Ge:H, F were studied by the gas evolution technique and by IR spectroscopy. Above 300°C the Si-F absorption peak decreases while the peak due to SiF4 molecules increases. No significant loss of F from the alloy films seems to occur up to 700°C.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 283
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

a) On leave of absence from the Research Center, Toyobo Co. Ltd., Otsu, Shiga, Japan.Google Scholar
1. Madan, A., Ovshinsky, S.R., Benn, E., Phil. Mag. 40, 259 (1979).CrossRefGoogle Scholar
2. Oda, S., Yamaguchi, Y., Hanna, J., Ishihara, S., Fujiwara, R., Kawate, S., Shimizu, I., Proc. Int. PVSEC-1, Kobe, Japan 1983, p. 429.Google Scholar
3. Matsumura, H., Sakai, K., Maeda, M., Furukawa, S., Physics 117B, 938 (1983).Google Scholar
4. Nakagome, Y., Matsumura, H., Furukawa, S., Jap. J. Appl. Phys. 19, L87 (1980).Google Scholar
5. Matsumura, H., Nakagome, Y., Furukawa, S., Appl. Phys. Lett. 36, 439 (1980).Google Scholar
6. Fang, C.J., Ley, L., Shanks, H.R., Gruntz, K.J., Cardona, M., Phys. Rev. B22, 6140 (1980).Google Scholar
7. Okada, Y., Slobodin, D., Chou, S.F., Schwarz, R., Wagner, S., this conference.Google Scholar
8. Slobodin, D., Kolodzey, J., Aljishi, S., Okada, Y., Chu, V., Shen, D.S., Schwarz, R., Wagner, S., Proc. 18th IEEE PVSC, Las Vegas, 1985, to be published.Google Scholar
9. Kolodzey, J., Aljishi, S., Schwarz, R., Wagner, S., Electrochem. Soc. Spring Meeting, Toronto, Abstract. No. 176, May 1985.Google Scholar
10. Kolodzey, J., Aljishi, S., Schwarz, R., Wagner, S., submitted to J. Vac. Sci. Technol.Google Scholar
11. Chou, S.F., Schwarz, R., Okada, Y., Slobodin, D., Kolodzey, J., Wagner, S., to be published.Google Scholar
12. Schwarz, R., Wagner, S., Kouzes, R.T., Wieting, R.D., Appl. Phys. Lett. 46, 552 (1985).CrossRefGoogle Scholar
13. Lucovsky, G., Pollard, W.B. in “Hydrogenated Amorphous Semiconductors II”, Topics in Applied Physics, Vol.56, Joannopoulos, J.D. and Lucovsky, G., eds., Springer, Berlin, 1984, p. 301.Google Scholar
14. Shimada, T., Katayama, Y., Horigome, S., Jap. J. Appl. Phys. 19, 265 (1980).Google Scholar
15. Ley, L., Shanks, H.R., Fang, C.J., Gruntz, K.J., Cardona, M., J. Phys. Soc. Japan 49 (Suppl. A), 1241 (1980).Google Scholar
16. Ley, L., private communication.Google Scholar
17. Fukada, N., Imura, T., Hiraki, A., Itahashi, T., Fukuda, T., Tanaka, M., Jap. J. Appl. Phys. 21, L532 (1982).Google Scholar
18. Shanks, H., Fang, C.J., Ley, L., Cardona, M., Demond, F.J., Kalbitzer, S., Phys. stat. sol. B100, 43 (1980).Google Scholar