Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T06:20:41.257Z Has data issue: false hasContentIssue false
  • English
  • Français

Fluorinated Parylene as an Interlayer Dielectric for Thin Film MCM's

Published online by Cambridge University Press:  15 February 2011

S. Dabral ,
X. Zhang ,
X.M. Wu ,
G.-R. Yang ,
C.-I. Lang ,
H. Bakhrut ,
R. Olson ,
T.-M. Lu  and
J. F. McDonald
S. Dabral
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
X. Zhang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
X.M. Wu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
G.-R. Yang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
C.-I. Lang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
H. Bakhrut
Affiliation:
Physics Department, Suny-Albany, Albany, NY 12222.
R. Olson
Affiliation:
Novatran Corp., Clear Lake, WI 54005.
T.-M. Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
J. F. McDonald
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
Get access

Abstract

Aliphatic tetrafluoro-poly-p-xylylene (PA-f), has been evaluated as an interlayer dielectric and its properties reported. It has a lower dielectric constant (2.38) and higher thermal stability (480°C) than Parylene-n. The as-deposited films are of very low crystallinity. The crystallinity increases as the film is annealed. Thermo-Gravimetric Analysis has shown that these films loose weight at temperatures > 480°C. A shrinkage in the films of about 10% was observed when annealed in vacuum at a temperature of 425°C. The as-deposited films were measured to have low dielectric constant of 2.38 and a volume resistivity of 1.3×1016 ohm-cm. The refractive index in the optical wavelengths was measured to be 1.3 for as-deposited samples which increased with anneal temperatures. The stress levels observed are also lower (19 MPa) than PA-n (40 MPa) after annealing. Diffusion of Cu into PA-f is comparable with Cu diffusion in PMDA-ODA polyimide. Scanning Electron Microscopy of film cross-section shows microstructure change above temperatures of 350°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 264: Symposium G – Electronic Packaging Materials Science VI , 1992 , 83
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Beach, W.F., Lee, C., Basset, D.R., Austin, T.M. and Olson, R., Encycl. Pol. Sci. Engr., Vol.17, Second Edition, John Wiley & Sons Inc., 1989, pp. 990.Google Scholar
[2] Majid, N., Dabral, S. and McDonald, J. F., J. Electronic Mat., Vol.18, No. 2, 1989, pp. 301.Google Scholar
[3] White, C.E., Loeb, W.E., Status report, 819-24-3-00067, Union Carbide Corp., Polymers R & D, New Jersey, 1966.Google Scholar
[4] Joesten, B.L., J. Apl. Polymer Sci., Vol.18 pp. 439–448 (1974).Google Scholar
[5] Feldman, L.C. and Mayer, J.W., chapter 3, pp. 53, North-Holland, 1986.Google Scholar
[6] Dabral, S., Yang, G.-R., Lu, T.-M., McDonald, J.F., J. Vacuum Science& echnology-A, July 1992 (to be published).Google Scholar
[7] Dabral, S., Yang, G., Bakhru, H., Lu, T.-M., McDonald, J.F., Proc. IEEE-VMIC, 1990, Santa Clara, CA., pp. 408.Google Scholar
[8] “Thermid EL low stress Polyimide for Multichip Module Interlayer” Product Specifications, National Starch & Chemical Co., Bridgewater, NJ.Google Scholar
[9] Dabral, S., Etten, J. Van, Apblett, C., Yang, G.-R., ficalora, P., J.F. McDonald, MRS Symp. Fall 91, Boston, MA.Google Scholar
[10] Faupel, F., Gupta, D., Silverman, B. D., and Ho, P. S., Appl. Phys. Lett. 55(4), July 1989, pp 357.Google Scholar