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First-principles investigation of the conductive filament configuration in rutile TiO2-x ReRAM

Published online by Cambridge University Press:  07 June 2012

Liang Zhao ,
Seong-Geon Park ,
Blanka Magyari-Köpe  and
Yoshio Nishi
Liang Zhao
Affiliation:
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, CA 94305, U.S.A.
Seong-Geon Park
Affiliation:
Department of Material Science and Engineering, Stanford University, 420 Via Palou Mall, Stanford, CA 94305, U.S.A.
Blanka Magyari-Köpe
Affiliation:
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, CA 94305, U.S.A.
Yoshio Nishi
Affiliation:
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, CA 94305, U.S.A.
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Abstract

The interactions and ordering of oxygen vacancies in rutile TiO2 were thoroughly investigated by density functional calculations to search for atomic configurations of the conductive filament. As random isolated vacancies could not support the low-resistance state conduction in TiO2 ReRAM, vacancy ordering was introduced in [110] and [001] directions of the lattice to study the electronic structures. The calculation results revealed that a di-vacancy chain in [001] direction makes the electrons delocalized in that direction, which is identified as a possible configuration of the conductive filament. This low-resistance state can be effectively disrupted by moving oxygen vacancies out of the filament to reach high-resistance states.

Keywords

memorysimulationdefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e09-15
Copyright
Copyright © Materials Research Society 2012

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References

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