No CrossRef data available.
Article contents
First Principles Study of Aluminum Deposition on Hydrogenterminated Si(100) Surface
Published online by Cambridge University Press: 22 February 2011
Abstract
The deposition of Aluminum on Si(100) surface has been investigated using density functional methods. This has been accomplished by adoption of a Si9H16 cluster to model the H terminated Si(100) 1XI surface and Si9H15 cluster to model the surface with an unpaired electron. The predicted NLSD dissociation energy for the Si9H16 → Si9H15 + H is 86.3 ± 2.0 Kcal/Mol. This is in agreement with previous theoretical calculations on similar systems.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1994
References
2.
Tsubouchi, K., Masu, K., Sasaki, K., and Mikoshiba, N., Technical Digest of 1991 IEEE International Electron Devices Meeting, Washington, DC 1991 (IEEE, NY, 1992) pp. 269.Google Scholar
3.
Tsubouchi, K. and Masu, K., Surface Chemical Cleaning and Passivation for Semiconductor Processing, San Francisco 1993, Materials Research Society Symposium Proceeding 315 (Materials Research Society, San Francisco, CA, 1993) pp. 59.Google Scholar
5.
Sosa, C., Lee, C., Nachtigall, P., and Jordan, K. D., Surface Chemical Cleaning and Passivationfor Semiconductor Processing, San Francisco 1993, Materials Research Society Symposium Proceeding 315 (Materials Research Society, San Francisco, CA, 1993) pp. 273.Google Scholar
6.
Nachtigall, P., Jordan, K. D., and Sosa, C., J. Phys. Chem.
97, 11666(1993)CrossRefGoogle Scholar
7. (a) Andzelm, J. and Wimmer, E., J. Chem. Phys.
96, 1280(1992); (b) J. Andzelm, in Density Functional Methods in Chemistry, edited by J. Labanowski and J. Andzelm (Springer-Verlag, NY, 1991) pp. 155.Google Scholar
13. (a) Becke, A. D., Phys. Rev.
A38, 3098 (1988); (b) A. D. Becke, J. Chem. Phys. 88, 2547(1988).Google Scholar
15.
Godbout, N., Salahub, D. R., Andzelm, J., and Wimmer, E., Can. J. Chem.
70, 560(1992).CrossRefGoogle Scholar