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First Phase Nucleation And Growth Of Titanium Disilicide With An iPhasis On The Influence Of Oxygen

Published online by Cambridge University Press:  26 February 2011

Harrie J. W. Van Houtum  and
Ivo J. M. M. Raaijmakers
Harrie J. W. Van Houtum
Affiliation:
Philips Research Laboratories, P.O. 80.000, 5600 JA Eindhoven, The, Netherlands.
Ivo J. M. M. Raaijmakers
Affiliation:
Philips Research Laboratories, P.O. 80.000, 5600 JA Eindhoven, The, Netherlands.
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Abstract

The existence of a TiSi2 phase in the C49 (ZrSi2) structure prior to formation of the stable low resistivity C54 TiSi2 structure has been justified for Ti-Si thin film diffusion couples after low temperature (500°C to 650°C) anneal. The transition temperature (Ttr) to the C54 phase is shown to be dependent on layer thickness, thinner films yielding higher Ttr. We could not detect an influence of oxygen on Ttr. Moreover the growth rate of C49 TiSi2 is independent of oxygen contamination in the Ti layer up to a mean concentration of 23 at.%. It is postulated that the transition from the C49 to the C54 phase actually is a recrystallization process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 37
Copyright
Copyright © Materials Research Society 1986

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References

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