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Finite Element Simulation of Hillock Formation in Aluminum Interconnect

Published online by Cambridge University Press:  26 February 2011

L. G. Burrell ,
S. Kapur  and
I. Shareef
L. G. Burrell
Affiliation:
IBM General Technology Division, Hopewell Junction, New York 12533
S. Kapur
Affiliation:
IBM General Technology Division, Hopewell Junction, New York 12533
I. Shareef
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

A non-linear finite element model has been used to simulate hillock formation in an aluminum interconnect structure. The hillock formation is caused by the thermal expansion mismatch between aluminum and the surrounding SiO2 passivation. Using the ABAQUS software [1], a large strain elastic-plastic-creep analysis was done. The results showed there were stresses large enough to cause yield and permanent deformation of the aluminum interconnect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 439
Copyright
Copyright © Materials Research Society 1991

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References

[1] “ABAQUS” is the registered trademark of Hibbitt, Karlsson and Sorensen Inc., Providence, Rhode Island.Google Scholar
[2] Jones, R. E. Jr, “Line Width Dependence, of Stresses in Aluminum Interconnect”, Proceedings IEEE International Reliability Physics Symposium (1987), pp. 9–14.Google Scholar
[3] Niwa, H., Yagi, H. and Tsuchikawa, H. “Stress Distribution in an Aluminum Interconnect of Very Large Scale Integration”, Journal of Applied Physics. 68 (1), July, 1990.Google Scholar
[4] Sauter, A. and Nix, W., “Finite Element Calculations of Thermally Stresses in Passivated and Unpassivated Lines Bonded to Substrates”, presented at the 1990 MRS Spring Meeting.Google Scholar
[5] Korhonen, M., Black, R., Li, C. Y., “Stress Relaxation of Passivated Aluminum Line Metallization on Silicon Substrates”, Journal of Applied Physics. 69 (3), February, 1991.Google Scholar