We have calculated the normalized stress σfxx/σ0 (σ0 is the stress in the large area stressor) in the stressor and σsxx/σ0 in the substrate for values of RE = Ef/Es (Ef is the Young's modulus of the stressor and Es, is the Young's modulus of the substrate) in the range 0.5 to 1.2. Substrate stresses for 13 stripe stressor samples are also calculated for RE = 0.9 which corresponds to an InGaAs stressor on GaAs with an In concentration of about 25%. It is found that for any given 1, the stress at a given depth increases monotonically as h increases (1 and h are the halfwidth and thickness of the stressor). The increase is rapid in the beginning for small value of h (l/h > 2). It becomes slow for 1/h < 2 and saturates at l/h = 0.5. For large i/h(l/h > 50) there are two stress wells in the substrate separated by a barrier. For l/h = 20 the two wells merge into one well with a flat bottom. As l/h decreases further the bottom curves downward, and for l/h < 2 the shape of the stress distribution curve resembles that of a parabola. The stress σsxx/σ0 decays rapidly with distance z from the interface. It is reduced to 1/3 of its value near the interface at z ˜ h. It is therefore necessary to construct the active layer close to the interface. Quality of the interface plays a dominant role in the Quantum structures fabricated in this manner. The shape and the strength of the stress well cannot be changed independently in these structures. We have suggested novel stressor designs to remove this limitation.