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The Fine Structure of the Mn Distribution in ZnO Layers Deposited by Magnetron Sputtering for Spintronic Application

Published online by Cambridge University Press:  01 February 2011

Morad Abouzaid  and
Pierre Ruterana
Morad Abouzaid
Affiliation:
[email protected], ENSCAEN, SIFCOM, 6, Bd Marechal Juin, Caen, 14050, France
Pierre Ruterana
Affiliation:
[email protected], ENSCAEN, SICOM, 6, Bd Marechal Juin, Caen, 14050, France, 33231452653, 33231452660
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Abstract

In this work, we carry out structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering, using transmission electron microscopy (TEM) and high resolution x-ray diffraction. On top of sapphire (0001) substrates, Mn rich precipitates and an interface reaction layer are observed following the deposition of Zn(Mn)O layers above 500°C. The crystalline quality of ZnO layers deposited by magnetron sputtering is highly improved at 500°C as well as the measured ferromagnetic response.

Keywords

transmission electron microscopy (TEM)ferromagneticsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 999: Symposium K – Novel Semiconductor Materials for Room-Temperature Ferromagnetism , 2007 , 0999-K06-03
Copyright
Copyright © Materials Research Society 2007

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References

[1] Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, 1019 (2000).Google Scholar
[2] Lawes, G., Risbud, A. S., Ramirez, A. P., and Seshadri, Ram, Phys. Rev. B 71, 045201 (2005).Google Scholar
[3] Venkatesan, M., Fitzgerald, C. B., Lunney, J. G., and Coey, J. M. D., Phys. Rev. Lett. 93, 177206 (2004).Google Scholar
[3] Jung, S. W., An, S.-J., Yi, G.-C., Jung, C. U., Lee, S.-I., and Cho, S., Appl. Phys. Lett. 80, 4561 (2002).Google Scholar
[5 ]Norton, D. P., Pearton, S. J., Hebard, A. F., Theodoropoulou, N., Boatner, L. A., and Wilson, R. G., Appl. Phys. Lett. 82, 239 (2003).Google Scholar
[6] Lim, S., Jeong, M., Ham, M., and Myoung, J., Jpn. J. Appl. Phys., Part 2 43, L280 (2004).Google Scholar
[7] Pearton, S.J., Abernathy, C.R., Norton, D.P., Hebard, A.F., Park, Y.D., Boatner, L.A., Budai, J.D., Mat. Sci. Eng. R 40 137(2003)Google Scholar
[8] Liu, C., Yun, F., Xiao, B., Cho, S.J., Moon, Y. T., Morkoç, H., Abouzaid, M., Ruterana, P., Yu, K. M. and Walukiewicz, W., J. App. Phys 97, 126107 (2005)Google Scholar
[9] Li, A. P., Shen, J., Thompson, J. R. and Weitering, H. H., Appl. Phys. Lett. 86, 152507 (2005).Google Scholar
[10] Pinto, N. et al. , Phys. Rev. B 72, 165203 (2005).Google Scholar
[11] Jamet, M., Barski, A., Devillers, T., Poydenot, V., Dujardin, R., Guillemaud, P. Bayle, Rothman, J., Bellet-Amalric, E., Cibert, J., Mattana, R., Tatarenko, S., Nature Materials 5, 653 (2006).Google Scholar
[12] Abouzaid, M., Ruterana, P., Liu, C., and Morkoç, H., J. Appl. Phys. 99, 113515 (2006)Google Scholar
[13] Abouzaid, M., Ruterana, P., Liu, C., and Morkoç, H., Physica status solidi (a) 204, 99(2007)Google Scholar
[14.] Katayama, H.-Yoshida Physica status sol (a)204, 15(2007)Google Scholar