Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T15:48:50.475Z Has data issue: false hasContentIssue false
  • English
  • Français

Field-effect Transistors of Tetracene Single Crystal on top of a Flexible Substrate

Published online by Cambridge University Press:  01 February 2011

Tae-Heon Kim ,
Joon Ho Lee ,
Jin heon Kim  and
Chang Seoul
Tae-Heon Kim
Affiliation:
[email protected] UniversityDepartment of Advanced Fiber Engineering, Division of Nanosystems Engineering253, Yong-hyun Dong, Nam-GuIncheon N/A 402-751Korea, Republic of
Joon Ho Lee
Affiliation:
[email protected], Inha University, Department of Advanced Fiber Engineering, Division of Nanosystems Engineering, 253 , Yong-hyun Dong, Nam-Gu, Incheon, N/A, 402-751, Korea, Republic of
Jin heon Kim
Affiliation:
[email protected], Inha University, Department of Advanced Fiber Engineering, Division of Nanosystems Engineering, 253, Yong-hyun Dong, Nam-Gu, Incheon, N/A, 402-751, Korea, Republic of
Chang Seoul
Affiliation:
[email protected], Inha University, Department of Advanced Fiber Engineering, Division of Nanosystems Engineering, 253, Yong-hyun Dong, Nam-Gu, Incheon, N/A, 402-751, Korea, Republic of
Get access

Abstract

Tetracene single crystals were prepared by the vapor transport method. The polyimide films were used for both substrate and gate dielectric layer. The single-crystal FETs should perform better than thin film transistors. Very thin crystals (~1 μm) were adhered to the substrate by due to electrostatic forces. The mobility of tetracene single-crystal field-effect transistors reaches the room-temperature value of 5×10-4 cm2/Vs.

Keywords

electrical propertiesadhesiondielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 920: Symposium S – Smart Nanotextiles , 2006 , 0920-S02-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Campbell, I.H. and Smith, D.L., Solid State Phys. 55, 1 (2001)Google Scholar
[2] Briseno, Alejandro L., Aizenberg, Joanna, Han, Yong-jin, Penkala, Rebecca A., Moon, Hyunsik, Lovinger, Andrew J., Kloc, Christian, and Bao, Zhenan, J. Am. Chem. Soc. 127, 12164–12165, 2005 Google Scholar
[3] Boer, R.W.I. de, Klapwijk, T.M., and Morpurgo, A.F., Appl. Phys. Lett. 83, 21 (2003)Google Scholar
[4] Donat, B. Pépin, Panozzo, S., Vial, J.-C., Beigné, C. and Rieutord, F., Synth. Met. 146, 225–231 (2004)Google Scholar
[5] Cicoira, F., Santato, C., Dinelli, F., Murgia, M., Loi, M.A., Biscarini, F., Zamboni, R., Heremans, P., and Muccini, M., Adv. Funct. Mat. 15, 375 (2005)Google Scholar