Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T02:19:07.306Z Has data issue: false hasContentIssue false

Field Emission from Nanocrystalline Diamond/Carbon Nanowall Composite Films Deposited on Scratched Substrates

Published online by Cambridge University Press:  10 January 2012

C.Y. Cheng
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
M. Nakashima
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
K. Teii
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Get access

Abstract

We report the deposition and field emission properties of nanostructured composites consisting of carbon nanowalls (CNWs) and nanocrystalline diamond films by introducing two kinds of substrate scratching pretreatment, i.e., undulation and ultrasonic vibration. With increasing duration of scratching pretreatment, the morphology of the deposits changes from simple CNWs to a film/CNW composite and lastly to CNWs on a film, and then the space between the walls is increased. The emission turn-on field is reduced from 2.1 V/μm for simple CNWs to around 1.2 V/μm for the composite films, accompanied by an increase in field enhancement factor. The results indicate that electric field screening between the walls is successfully suppressed by widening of the wall spacing.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wu, Y. H., Qiao, P. W., Chong, T. C., and Shen, Z. X., Adv. Mater. (Weinheim, Ger.) 14 (2002) 64.Google Scholar
2. Kobayashi, K., Tanimura, M., Nakai, H., Yoshimura, A., Yoshimura, H., Kojima, K., and Tachibana, M., J. Appl. Phys. 101 (2007) 094306.Google Scholar
3. Wu, Y., Yang, B., Zong, B., Sun, H., Shen, Z., and Feng, Y., J. Mater. Chem. 14, 469 (2004).Google Scholar
4. Chuang, A. T. H., Robertson, J., Boskovic, B. O., and Kozio, K. K. K., Appl. Phys. Lett. 90, 123107 (2007).Google Scholar
5. Malesevic, A., Kemps, R., Vanhulsel, A., Chowdhury, M. P., Volodin, A., and Haesendonck, C. V., J. Appl. Phys. 104 (2008) 084301.Google Scholar
6. Shimada, S., Teii, K., and Nakashima, M., Diamond Relat. Mater. 19 (2010) 956.Google Scholar
7. Teii, K. and Nakashima, M., Appl. Phys. Lett. 96 (2010) 023112.Google Scholar
8. Teii, K., Shimada, S., Nakashima, M., and Chuang, A. T. H., J. Appl. Phys. 106 (2009) 084303.Google Scholar
9. Lee, C. J., Kim, D. W., Lee, T. J., Choi, Y. C., Park, Y. S., Lee, Y. H., Choi, W. B., Lee, N. S., Park, G. S., and Kim, J. M., Chem. Phys. Lett. 312 (1999) 461.Google Scholar