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Field Effect Transistors of BTQBT and its Derivatives

Published online by Cambridge University Press:  01 February 2011

Masaki Takada ,
Yoshiro Yamashita  and
Hirokazu Tada
Masaki Takada
Affiliation:
Department of Functional Molecular Science, The Graduate University for Advanced Studies, 38 Myodaiji, Okazaki, 444-8585, Japan
Yoshiro Yamashita
Affiliation:
Department of Electronic Science and Technology, Tokyo Institute of Technology, Nagata-cho, Midori-ku, Yokohama, 226-8502, Japan
Hirokazu Tada
Affiliation:
Institute for Molecular Science, 38 Myodaiji, Okazaki, 444-8585, Japan
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Abstract

We have prepared and characterized thin film field effect transistors (FETs) of bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole) (BTQBT) and its derivatives. Preparation and characterization of the films were carried out under ultrahigh vacuum condition. Most materials examined showed p-type semiconducting behaviors. Among p-type molecules, BTQBT films deposited at room temperature showed the highest mobility and on/off ratio of 0.2 cm2/Vs and 108, respectively, at optimal film growth conditions. These performances are almost comparable to those of pentacene and polythiophene thin films, indicating that BTQBT molecule is a prominent semiconducting material for high-speed organic transistors. It was also found that a tetracyanoquinodimethane (TCNQ) derivative showed an n-type semiconducting behavior with an electron mobility of 8.9 x 10-4 cm2/Vs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 725: Symposium P – Organic and Polymeric Materials and Devices-Optical, Electrical, and Optoelectronic Properties , 2002 , P10.6
Copyright
Copyright © Materials Research Society 2002

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