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Fick's Law and Transient Diffusion of Boron in Silicon

Published online by Cambridge University Press:  15 February 2011

David T. Wu
David T. Wu*
Affiliation:
Department of Mechanical Engineering, Yale University, New Haven, CT 06520–8224
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Abstract

The phenomenon of transient diffusion of boron in crystalline silicon is considered. The local equilibrium assumption from the law of mass action is not used in order to estimate the length of the transient regime. For an interstitial diffuser such as boron, the pair of diffusion equations, one each for the mobile and the immobile species, can be interpreted as a generalized Fick's Law in the total concentration with a position- and time-dependent diffusion coefficient whose concentration-weighted average, called the global diffusion coefficient, has an analytic solution for an appropriately defined time-lag. At 850°C for boron, the transient in the global diffusion coefficient is negligible, showing that the local equilibrium assumption is justified. An estimate is given for conditions under which local equilibrium may not be valid.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 365
Copyright
Copyright © Materials Research Society 1997

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References

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