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A few Problem in the Vapor Deposition of Diamond

Published online by Cambridge University Press:  21 February 2011

Nobuo Setaka*
Affiliation:
National Institute for Research in Inorganic Materials,Tsukuba Ibaraki, 305, Japan
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Abstract

Recently, there is considerable interest in semiconductor diamond films prepared by vapor deposition. The fact originates from their unique properties and potential for the devices operating at high temperature and high power. What diamond films were feasible by vapor deposition, provide the driving force for developing diamond for advanced electronic devices. However, there exist many large barriers. Their presence tends to de-press futher progress in the investigation and industrialization.

The purpose of this paper is to point out the problems actually encountered in developing it and to describe its future direction on the basis of my present understanding.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

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