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β-FeSi2 thin-films grown by a pulsed laser deposition

Published online by Cambridge University Press:  17 March 2011

Shin-ichiro Uekusa ,
Yasuharu Watanabe ,
Yasuhiro Aida  and
Noboru Miura
Shin-ichiro Uekusa
Affiliation:
School of Sci. & Tech., Meiji University, 1-1-1 Higashi-mita, Tama-ku, Kawasaki-shi, Kanagawa 214-8571, Japan
Yasuharu Watanabe
Affiliation:
School of Sci. & Tech., Meiji University, 1-1-1 Higashi-mita, Tama-ku, Kawasaki-shi, Kanagawa 214-8571, Japan
Yasuhiro Aida
Affiliation:
School of Sci. & Tech., Meiji University, 1-1-1 Higashi-mita, Tama-ku, Kawasaki-shi, Kanagawa 214-8571, Japan
Noboru Miura
Affiliation:
School of Sci. & Tech., Meiji University, 1-1-1 Higashi-mita, Tama-ku, Kawasaki-shi, Kanagawa 214-8571, Japan
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Abstract

Orthorhombic β-FeSi2 thin-films were prepared on Si(100) and Si(111) substrates by a pulsed laser deposition method. When the substrate temperature was 500°C, β-FeSi2 thin-films were grown on Si(100) and Si(111) substrates. The thin-films grown on Si(100) and Si(111) substrates were polycrystalline and monocrystalline structures, respectively. The values of band-gap energy calculated from transmittance measurements were 0.71-0.72 eV. From Raman scattering measurements, it was found that the distortion due to the lattice mismatch between a β-FeSi2 thin-film and a Si substrate originates in the β-FeSi2/n-Si interface. Moreover, the fine crystals of β-FeSi2 existed in an amorphous thin-film which was grown on Si(111) substrate at room temperature (RT).

From van der Pauw measurements, conduction type, carrier concentration and Hall mobility were p-type, 1018-1021 cm−3 and 200-500 cm2/Vsec, respectively. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution agrees with an ideal one-sided slope junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P6.34
Copyright
Copyright © Materials Research Society 2001

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