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Ferromagnetism and Luminescence of Diluted Magnetic Semiconductors GaGdN and AlGdN

Published online by Cambridge University Press:  01 February 2011

Shuichi Emura ,
Masahiro Takahashi ,
Hiroyuki Tambo ,
Akira Suzuki ,
Tetsuya Nakamura ,
Yi-Kai Zhou ,
Shigehiko Hasagawa  and
Hajime Asahi
Shuichi Emura
Affiliation:
[email protected]@gmail.com, ISIR, United States
Masahiro Takahashi
Affiliation:
[email protected], ISIR, Ibaraki, Japan
Hiroyuki Tambo
Affiliation:
[email protected], ISIR, Ibaraki, Japan
Akira Suzuki
Affiliation:
[email protected], Research Organaization of Science and Engineering, Kusatsu, Japan
Tetsuya Nakamura
Affiliation:
[email protected], SPring-8/JASRI, Sayou, Japan
Yi-Kai Zhou
Affiliation:
[email protected], ISIR, Ibaraki, Japan
Shigehiko Hasagawa
Affiliation:
[email protected], ISIR, Ibaraki, Japan
Hajime Asahi
Affiliation:
[email protected], ISIR, Ibaraki, Japan
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Abstract

The magnetic characteristics of the dilute magnetic system GaGdN are investigated by mainly soft-X-ray magnetic circular dichroism (MCD) in energy range of 1160 – 1240 eV. The strong MCD signals up to 30 % at 15K are observed. The temperature dependence of its intensity is not on simple Curie-Weiss curve and depicts three-step curve. A step around 40 – 100K suggests a new magnetic phase. The luminescence spectrum of GaGdN at low temperature is divided into three parts consisting of two broad bands around 432 nm and 503 nm and a sharp peak at 652 nm. This sharp line is assigned to the intra-transition of f – f orbital owing to the weak temperature dependence of the intensity and peak position. AlGdN grown by molecular beam epitaxy produces luminescence at 318.5 nm. X-ray absorption fine structure is examined to survey the occupancy of the Gd ion in the grown specimens.

Keywords

ferromagneticGdspintronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D03-01
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Teraguchi, N., Suzuki, A., Nanishi, Y., Zhou, Y.K., Hashimoto, M. and Asahi, H., Solid State Commun. 122, 651–653 (2002).Google Scholar
2. Dhar, S., Brandt, O., Rarnsteiner, M., Sapega, V. F., and Ploog, K. H., Phys. Rev. Lett., 94 037205 (2005).Google Scholar
3. Perez, L., Lau, G.S., Dhar, S., Brandt, O., and Ploog, K. H., Phys. Rev, B74, 195207 (2006).Google Scholar
4. Ney, A., Kammermeier, T., Manuel, E., Ney, V., Ploog, K. H., Wilhelm, F., and Rogalev, A., Appl. Phys. Lett., 90, 252515 (2007).Google Scholar
5. Khaderbad, M. A., Dhar, S., Perez, L., Ploog, K.H., Melnikov, A., and Wleck, A. D., Appl. Phys. Lett., 91, 072514 (2007).Google Scholar
6. Liu, L., Yu, Peter Y., Ma, Z., and Mao, Samuel S., Phys. Rev. Lett., 100, 127203 (2008).Google Scholar
7. Gohda, Y. and Oshiyama, A., Phys. Rev. B78, 161201(R) (2008).Google Scholar
8. Teraguchi, N., Suzuk, A., and & Nanishi, Y., Material Science forum 389–393, 1477 (2002).Google Scholar
9. for example, Suski, T., et al, Appl. Phys. Lett., 67 2188 (1995).Google Scholar
10. Dieke, G. H. & Crosswhite, H. M., Applied Optics, 2, 675–686 (1963).Google Scholar
11. Aldabergenova, S. B., et al., J. Non-Cryst. Solids, 299–302, 709–713 (2002). Tb3 Google Scholar
12. Wakahara, A., et al. The 22nd Electronic Materials Symposium (EMS-22), 227–229 (2003). Tb3 Google Scholar