Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-23T15:44:26.864Z Has data issue: false hasContentIssue false
  • English
  • Français

Ferromagnetic Mn-Mn Interactions in Low Doped Zn1-xMnxO Thin Films

Published online by Cambridge University Press:  01 February 2011

Aroussi BenMahmoud ,
H.Jurgen von Bardeleben ,
Alain Mauger ,
Jean Louis Cantin ,
Ekaterina Chikoidze  and
Yves Dumont
Aroussi BenMahmoud
Affiliation:
[email protected], Faculté des Sciences de Gabès, Physique Cité Erriadh Gabès 6079, Tunisia
H.Jurgen von Bardeleben
Affiliation:
[email protected], CNRS Université Paris 6, INSP, 140, rue de Lourmel, Pa ris, 75015, France
Alain Mauger
Affiliation:
[email protected], CNRS, MPPU, Paris, 75015, France
Jean Louis Cantin
Affiliation:
[email protected], Université Paris 6, Paris, 75015, France
Ekaterina Chikoidze
Affiliation:
[email protected], CNRS, GEMC, Meudon, 92195, France
Yves Dumont
Affiliation:
[email protected], CNRS, GEMC, Meudon, 92195, France
Get access

Abstract

We have studied by electron paramagentic resonance spectroscopy the Mn2+ EPR spectra in low doped (x=0.03) Zn1-xMnxO films of n-type conductivity prepared by metalorganic chemical vapour deposition. Contrary to higher doped films with x=0.07, the x=0.03 film shows a weak ferromagnetic Mn-Mn interaction which we attribute to the presence of moderate deep donors leading to magnetic polaron formation.

Keywords

ferromagneticII-VIelectron spin resonance
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K04-11
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sato, K., Katayama-Yoshida, H., Jpn. J. Appl. Phys. 39, 555(2000) and ibid 40, L334(2001)Google Scholar
2. Dietl, T., Ohno, H., Matsukura, F., Cibert, J., Ferrand, D., Science 287, 1015 (2000)Google Scholar
3. Janisch, R., Gopal, P., Spaldin, N. A., J. Phys: Condens. Matter 17, R657(2005)Google Scholar
4. Coey, J. M. D., Venkatesan, M., Fitzgerald, C. B., Nature Materials 4, 173(2005)Google Scholar
5. Radovanovic, P. V., Gamelin, D. R., Phys. Rev. Lett. 91, 157202–1(2003)Google Scholar
6. Seshadri, R., Current Opinion in Solid State & Materials Science 9, 1 (2005)Google Scholar
7. Chanier, T., Sargolzaei, M., Opahle, I., Hayn, R., and Koerpernik, K., Phys. Rev. B73, 134418 (2006).Google Scholar
8. Toyoda, M., Akai, A., Sato, K., Katayam-Yoshida, H., Physica B 376–377, 647 (2006)Google Scholar
9. Theodoropoulou, N., Misra, V., Philip, J., LeClair, P., Berera, G. P., Moodera, J. S., Satpati, B., T. Som J. Mag. Magnetic Mat. (2006)Google Scholar
10. Diaconu, M. et al, J. of Magnetism and Magnetic Materials. 307, 212 (2006)Google Scholar
11. BenMahmoud, A., von Bardeleben, H. J., Cantin, J. L., Chikoidze, E., A. Mauger J. AppL. Phys. to be published (2006)Google Scholar
12. Chikoidze, E., Dumont, Y., Jomard, F., Ballutaud, D., Galtier, P., Gorochov, O., Ferrand, D. J. Appl. Phys. 97, 10D327 (2005)Google Scholar
13. Gratens, X., Bindilatti, V., Oliveira, N. F., Shapira, Y., Foner, S., Golacki, Z., and Haas, T. E., Phys. Rev. B 69, 125209 (2004).Google Scholar
14. Diaconu, M., Schmidt, H., Poppl, A., .Böttcher, , Hoentsch, J., Klunker, A., Spemann, D., Hochmuth, H., Lorenz, M., Grundmann, M., Phys. Rev. B 72, 085214(2005)Google Scholar
15. Garcia, M. A. et al, Phys. Rev. Lett. 94, 217206 (2005)Google Scholar
16. Park, C. H. and Chadi, D. J., Phys. Rev. Lett. 94, 127204 (2005)Google Scholar
17. Hofmann, D. M., Hofstaetter, A., Leiter, F., Zhou, H., Henecker, F., and Meyer, B. K., Phys. Rev. Lett. 88, 045504 (2002)Google Scholar
18. Dietl, T., in Handbook on Semiconductors, edited by Moss, T. S. (North Holland, Amsterdam, 1994), vol 3b, p. 1251.Google Scholar