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Ferroelectric Thin Films on Silicon and Fused Silica Substrates by Sol-Gel Process

Published online by Cambridge University Press:  16 February 2011

Yuhuan Xu ,
Ching Jih Chen ,
Ren Xu  and
John D. Mackenzie
Yuhuan Xu
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024
Ching Jih Chen
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024
Ren Xu
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024
John D. Mackenzie
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024
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Abstract

Ferroelectric thin films including undoped and doped PZT (lead zirconate titanate), BaTiO3 (barium titanate), SBN (strontium barium niobate), KNbO3 (potassium niobate), PBN (lead barium niobate), KNSBN (potassium sodium strontium barium niobate), and LiNbO3 (lithium niobate) were made on silicon and fused silica substrates by a sol-gel process. Microstructure and physical (pyroelectric, ferroelectric and optical) properties of these thin films were studied. Transparent and preferentially orientated SBN thin films on fused silica substrates can be obtained by applying a d.c. electric field during heat treatment. A heterojunction effect was observed in ferroelectric thin films on both n-silicon and p-silicon through measurement of I-V characteristics, and by the demonstration of a photocurrent effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 13
Copyright
Copyright © Materials Research Society 1990

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References

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