Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-09T20:37:54.099Z Has data issue: false hasContentIssue false

Ferroelectric PTCR Films for Photonic Crystal Gas Sensor

Published online by Cambridge University Press:  01 February 2011

J. RaviPrakash
Affiliation:
[email protected], ICX - Ion Optics, R&D, 411 Waverley Oaks Road, Suite 144, Waltham, MA, 02452-8484, United States, 7817888777 x111, 7817888811
Susan Trolier-McKinstry
Affiliation:
[email protected], Pennsylvania State University, 151 Materials Research Laboratory, University Park, PA, 16802, United States
Jing-Gong Cheng
Affiliation:
[email protected], Pennsylvania State University, 151 Materials Research Laboratory, University Park, PA, 16802, United States
Mark McNeal
Affiliation:
[email protected], Ion Optics, 411 Waverley Oaks Road, Suite 144, Waltham, MA, 02452, United States
Anton Greenwald
Affiliation:
[email protected], Ion Optics, 411 Waverley Oaks Road, Suite 144, Waltham, MA, 02452, United States
Irina Puscasu
Affiliation:
[email protected], Ion Optics, 411 Waverley Oaks Road, Suite 144, Waltham, MA, 02452, United States
Edward Johnson
Affiliation:
[email protected], Ion Optics, 411 Waverley Oaks Road, Suite 144, Waltham, MA, 02452, United States
Martin Pralle
Affiliation:
[email protected], Ion Optics, 411 Waverley Oaks Road, Suite 144, Waltham, MA, 02452, United States
Ashak Shah
Affiliation:
[email protected], Ion Optics, 411 Waverley Oaks Road, Suite 144, Waltham, MA, 02452, United States
Get access

Abstract

We examined lanthanum doped lead barium titanate films for temperature measurements of photonic crystal - MEMS devices. Films were deposited by sol-gel techniques and crystallized in air above 650°C. X-ray diffraction spectra consistent with the perovskite structure were detected. The room temperature dielectric constant was ∼570 at 10 kHz of La-doped (0.3 mol%) Pb0.3Ba0.7TiO3 films. These films had a remanent polarization of ∼20μC/cm2 and a coercive field of 145 kV/cm. The leakage current density was ∼ 2×10−7 amps/cm2 at 100 kV/cm field. The resistivity of the films extracted from the linear region of the I-V data (electric fields in excess of 100 kV/cm) measured as a function of temperature shows an increase in resistivity at temperatures above Tc (120°C for BaTiO3 and 240°C for Pb0.3Ba0.7TiO3) of the film consistent with positive coefficient of resistance (PTCR) effect. However, the change in resistance was small when compared to bulk samples of similar compositions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. “Photonic Crystals Enable Infrared Gas Sensors Irina Puscasu*, Ed Johnson, Martin Pralle, Mark McNeal, Jim Daly, and Anton Greenwald, presented at SPIE conference symposium on “Nanoengineering: Fabrication, Properties, Optics, and Devices”, Denver, CO (2004), SPIE Proc. v5515, p.58 (2004).Google Scholar
2. Hozer, L., Semiconductor ceramics – grain boundary effects. Ellis Horwood Series in Physics and its Application, (1994).Google Scholar
3. Heywang, W., “Semiconducting Barium Titanate,” Journal of Materials Science, vol. 6, pp. 12141226, (1971).Google Scholar
4. Gallego, M. M. and West, A. R., “Effects of annealing treatments on positive temperature coefficient of resistance properties of barium titanate ceramics and a new model for the positive temperature coefficient of resistance effect,” Journal of Applied Physics, vol. 90, no. 1, pp. 394403, 2001.Google Scholar
5. Streiffer, S. K. , S. K. and O., Auciello, “Anomalous leakage current characteristics of Pt/(Ba0.75Sr0.25)Ti1+yO3+z/Pt thin films grown by metal organic chemical vapor deposition,” Applied Physics Letters, vol. 83, no. 7, pp. 14141416, (2003).Google Scholar
6. Watanabe, O. , Y. and S-W., Cheong, “Nonlinear positive temperature coefficient of resistance of BaTiO3,” Applied Physics Letters, vol. 82, no. 12, pp. 1923–1925, (2003).Google Scholar
7. Lee, H. L. C. , K. H. and Chang, S. K., “A positive coefficient of resistivity effect from a paraelectric Pt/(Ba0.5S0.5)TiO3/IrO2 thin-filmscapacitor,” Applied Physics Letters, vol. 71, no. 3, pp. 371373, (1997).Google Scholar
8. Sharma, H. B., Sarma, H. N. K., Mansingh, A., Ferroelectric and dielectric properties of solgel processed barium titanate ceramics and thin films, Journal of Materials Science 34 (1999) 13851390.Google Scholar
9. Jaffe, B., Cook, W. R. Jr, Jaffe, H., Piezoelectric Ceramics, Academic Press Ltd, 1971.Google Scholar