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Ferroelectric Properties and Crystalline Structures of BaMgF4 Thin Films Grown on Pt(111)/SiO2/Si(100)

Published online by Cambridge University Press:  10 February 2011

Masashi Moriwaki ,
Koji Aizawa ,
Eisuke Tokumitsu  and
Hiroshi Ishiwara
Masashi Moriwaki
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
Koji Aizawa
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
Eisuke Tokumitsu
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
Hiroshi Ishiwara
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
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Abstract

Crystalline quality and ferroelectric properties of (120)-oriented BaMgF^BMF) films grown on Pt(111)/SiO2/Si(100) and n-Si(111) substrates have been investigated. The BaMgF4 films grown on Pt(111) have large and flat grains, while the films on Si(111) have small grains. The C-V curve of BaMgF4/Pt(111)/SiO2/Si(100) diodes showed a hysteresis loop with a memory window of 3.8V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 75
Copyright
Copyright © Materials Research Society 1997

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References

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