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Ferroelectric Gates for Modulation of 2D Electron Gas at GaN/AlGaN Interfaces

Published online by Cambridge University Press:  26 February 2011

Igor Stolichnov ,
Lisa Malin ,
Paul Muralt  and
Nava Setter
Igor Stolichnov
Affiliation:
[email protected], EPFL, IMX-LC, Station 12, Lausanne, VD, CH-1015, Switzerland, +41216934954, +41216935810
Lisa Malin
Affiliation:
[email protected]
Paul Muralt
Affiliation:
[email protected]
Nava Setter
Affiliation:
[email protected]
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Abstract

The Pb(Zr,Ti)O3 ferroelectric gate was successfully integrated into the GaN/AlGaN heterostructure with 2D electron gas. The processing conditions were optimized in a way to obtain high quality textured Pb(Zr,Ti)O3 films without destroying the 2D gas situated as close to the interface as 20nm. Study of transport properties in this system demonstrates a possibility to control the 2D gas by switching the spontaneous polarization in the gate. Concentration and mobility of electrons in the 2D gas were monitored using Hall effect and resistivity measurements in a wide temperature range from 4.2K to 300K. The polarization oriented in the direction “from bottom to top” provokes a partial depletion effect in the channel resulting in a conductivity decrease. A correlation between the depletion effect in 2D gas and the change of the spontaneous polarization with temperature has been observed. The depletion effect is found to be reversible so that the initial conductivity in 2D gas can be restored by inversing the spontaneous polarization in the gate. These results suggest that ferroelectric gates integrated into systems with 2D electron gas may be potentially interesting for a number of experiments and applications as a flexible and nondestructive way of making rewritable nanopatterns on semiconductor heterostructures.

Keywords

electronic materialferroelectricfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T05-05
Copyright
Copyright © Materials Research Society 2006

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