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Ferroelectric and Fatigue Properties of Alkoxy-Derived CaBi2Ta2O9 Thin Films

Published online by Cambridge University Press:  21 March 2011

Kazumi Kato
Affiliation:
National Industrial Research Institute of Nagoya, 1 Hirate-cho, Kita-ku, Nagoya 462-8510, Japan, [email protected] Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8503, Japan
Kazuyuki Suzuki
Affiliation:
National Industrial Research Institute of Nagoya, 1 Hirate-cho, Kita-ku, Nagoya 462-8510, Japan
Kaori Nishizawa
Affiliation:
National Industrial Research Institute of Nagoya, 1 Hirate-cho, Kita-ku, Nagoya 462-8510, Japan
Takeshi Miki
Affiliation:
National Industrial Research Institute of Nagoya, 1 Hirate-cho, Kita-ku, Nagoya 462-8510, Japan
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Abstract

CaBi2Ta2O9 (CBT) thin films were successfully prepared on Pt-passivated quartz glass substrates using a triple-alkoxide solution. The thin film crystallized to a single phase of perovskite at 750°C via a mixture of fluorite and perovskite phases. The 750°C-annealed thin film showed random orientation and consisted of fine grains with a diameter of about 80 nm. The dielectric constant and loss factor were 124 and 0.04, respectively, and were constant in the frequency range of 10 kHz to 1 MHz. The thin film exhibited P-E hysteresis loops at relatively high voltages. The remanent polarization and coercive electric field were 6.9 μC/cm2 and 170 kV/cm at 13 V, respectivey. The fatigue behaviors against various electric pulse sequences were examined. The polarization did not change when the pulse width was short such as 10-6 s, however, it increased gradually with number of switching cycles when the pulse width was relatively long such as 10-3 s.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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