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Fentosecond Time Resolved Surface Structural Dynamics of Optically Excited Silicon

Published online by Cambridge University Press:  22 February 2011

C. V. Shank ,
R. Yen  and
C. Hirlimann
C. V. Shank
Affiliation:
Bell Laboratories, Holmdel, New Jersey 07733
R. Yen
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
C. Hirlimann
Affiliation:
Universite Pierre et Marie Curie, Paris, France
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Abstract

Laser processing of materials has raised a number of interesting issues relating to phase transitions and the structure of optically excited semiconductors. In this paper we describe the dynamics of structural changes that take place on a silicon surface following excitation with an intense optical pulse. Second harmonic generation from the silicon surface is used as a tool to measure crystalline order with 90 femtosecond resolution. The three-fold rotational symmetry of the silicon <111> surface is observed to become rotationally isotropic within a picosecond after excitation consistent with a transition from the crystalline to the liquid molten state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 53
Copyright
Copyright © Materials Research Society 1984

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References

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