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Features of Plasma Grown Native Oxides on Indium Phosphide

Published online by Cambridge University Press:  22 February 2011

E. D. Belyakova
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
S. V. Belyakov
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
L. S. Berman
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
A. T. Gorelenok
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
I. N. Karimov
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
R. V. Karzhavin
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
V. M. Mikoushkin
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
I. A. Mokina
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
S. E. Sysoev
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
N. M. Shmidt
Affiliation:
Ioffe Physjcal Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
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Abstract

Ellipsometry and XPS investigations of RF plasma grown native oxide and C-V measurements of its interface were performed.

Strong dependence of the composition of the plasma grown native oxides and electric properties of MIS structures on the time of plasma treatment has been observed. The greater the content of stable polyphosphate phase of [InxPyOz] is in the native oxide composition, the better parameters of its interface with InP (NS 11 cm−2 eV−1 and the hysteresis of C-V characteristics≤0.2 V) and the lesser C-V drift after treatment may be achieved. Plasma oxidation results in creating a negative effective oxide charge density.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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