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Features of Plasma Grown Native Oxides on Indium Phosphide
Published online by Cambridge University Press: 22 February 2011
Abstract
Ellipsometry and XPS investigations of RF plasma grown native oxide and C-V measurements of its interface were performed.
Strong dependence of the composition of the plasma grown native oxides and electric properties of MIS structures on the time of plasma treatment has been observed. The greater the content of stable polyphosphate phase of [InxPyOz] is in the native oxide composition, the better parameters of its interface with InP (NS 11 cm−2 eV−1 and the hysteresis of C-V characteristics≤0.2 V) and the lesser C-V drift after treatment may be achieved. Plasma oxidation results in creating a negative effective oxide charge density.
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- Copyright © Materials Research Society 1993