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Features of Electronic Transport in relaxed Si/Si1-XGeX Heterostructures with High doping level

Published online by Cambridge University Press:  05 March 2013

Lev K. Orlov ,
A. A. Mel’nikova ,
Mikhail L. Orlov ,
Natal’ya A. Alyabina ,
Natal’ya L. Ivina ,
V. N. Neverov  and
Zsolt J. Horváth
Lev K. Orlov
Affiliation:
Institute for Physics of Microstrucrures, Russian Academy of Sciences, Nizhny Novgorod, Russia Nizhny Novgorod State Technical University, Nizhny Novgorod, Russia
A. A. Mel’nikova
Affiliation:
Nizhny Novgorod State Technical University, Nizhny Novgorod, Russia
Mikhail L. Orlov
Affiliation:
Institute for Physics of Microstrucrures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Natal’ya A. Alyabina
Affiliation:
Nizhny Novgorod Lobachevsky University, Nizhny Novgorod, Russia
Natal’ya L. Ivina
Affiliation:
Nizhny Novgorod Lobachevsky University, Nizhny Novgorod, Russia
V. N. Neverov
Affiliation:
Institure for Physics of Metals, Russian Academy of Sciences, Yekaterinburg, Russia,
Zsolt J. Horváth
Affiliation:
Óbuda University, Kandó Kálmán Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Hungary Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Budapest, Hungary
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Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Keywords

electrical propertiesSinanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1534: Symposium 6B – Low-Dimensional Semiconductor Structures , 2013 , pp. A43 - A48
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

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