Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:50:57.736Z Has data issue: false hasContentIssue false

Feasibility studies of using PED deposited Sn-doped In2O3 Films for Organic Electronic Devices

Published online by Cambridge University Press:  18 July 2011

Sushma Kotru
Affiliation:
Department of Electrical and Computer Engineering and MINT, University of Alabama, Tuscaloosa, AL 35487
Rachel M. Frazier
Affiliation:
Alabama Innovation and Mentoring of Entrepreneurs, University of Alabama, Tuscaloosa, AL 35487
Mengwei Chen
Affiliation:
Department of Electrical and Computer Engineering and MINT, University of Alabama, Tuscaloosa, AL 35487
Harshan V. Nampoori
Affiliation:
Department of Electrical and Computer Engineering and MINT, University of Alabama, Tuscaloosa, AL 35487
Daniel T. Daly
Affiliation:
Alabama Innovation and Mentoring of Entrepreneurs, University of Alabama, Tuscaloosa, AL 35487
Get access

Abstract

In this work, pulsed electron deposition was used to prepare thin films of ITO on plastic substrates. These films were used as electrodes for organic photovoltaic devices to determine the feasibility of using PED deposited ITO as electrodes. ITO films deposited on plastic showed optical transmission values as high as 85% for films deposited at high pressures. Films deposited on plastic substrates were further used to prepare a test organic solar cell, with ITO as the bottom electrode. The device performance was seen to depend on the quality of the ITO electrode, and the ITO film deposited at the lowest oxygen pressure was found to be the best electrode for the organic photovoltaic device.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Maruyama, T. and Fukui, K., Thin Solid Films 203, (1991) 297302.Google Scholar
[2] Yang, C.H., Lee, S.C., Lin, T.C., and Chen, S.C., Thin Solid Films 516, (2008) 19841991.Google Scholar
[3] Sato, Y., Taketomo, M., Ito, N., Miyamura, A., and Shigesato, Y., Thin Solid Films 516, (2008) 45984602.Google Scholar
[4] Bender, M., Seelig, W., Daube, C., Frankenberger, H., Ocker, B., and Stollenwerk, J., Thin Solid Films 326, (1998) 7277.Google Scholar
[5] Chiou, B. S., Wu, W. F., Hsieh, S. T., Semicond. Sci. Technol. 9(6), (1994) 1242.Google Scholar
[6] Tuna, O., Selamat, Y, Aygun, G. and Ozyuze, L., Journal of Physics D: Applied Physics 43, (2010) 055402.Google Scholar
[7] Nath, P., Bunshah, R. F., Basol, B. M., and Staffsud, O. M., Thin Solid Films 72, 4 (1980) 463468.Google Scholar
[8] Fallah, H. R., Ghasemi, M., Hassanzadeh, A., and Steki, H., Materials Research Bulletin 42, (2007) 487496.Google Scholar
[9] Rozati, S. M. and Ganj, T., Renewable Energy 29, (2004) 16711676.Google Scholar
[10] Dekkers, J. M., Rijnders, G., and Blank, D. H. A., Applied Physics Letters 88, (2006) 151908.Google Scholar
[11] Kim, H., Gilmore, C. M., Pique, A., Horwitz, J. S., Mattoussi, H., Murata, H., Kafafi, Z. H., and Chrisey, D. B., Journal of Applied Physics 86, (1999) 64516461.Google Scholar
[12] Viespe, C., Nicolae, I., Sima, C., Grigoriu, C., and Medianu, R., Thin Solid Films 515, (2007) 87718775.Google Scholar
[13] Pammi, S. V. N., Chanda, A., Seong, N.-J., and Yoon, S.-G., Chemical Physics Letters 490,(2010) 234237.Google Scholar
[14] Nampoori, H. V., Rincon, V., Chen, M., and Kotru, S., Jour Vacuum Sci Tech A 671674,(2004) 14831485.Google Scholar
[15] Kotru, Sushma, Chen, Mengwei, and Nampoori, Harshan V., Frazier, Rachel M., , Thin solid Films, communicated, 2011.Google Scholar
[16] Du, W., Zong, F., Ma, H., Ma, J., Zhang, M., Feng, X., Li, H., Zhang, Z., and Zhao, P., Crystal Research and Technology 41, (2006) 889892.Google Scholar