Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T08:08:50.813Z Has data issue: false hasContentIssue false
  • English
  • Français

Feasibility of Simox Material Quality Determination Using Spectroellipsometry: Comparison With Raman And Planar View Transmission Electron Microscopy

Published online by Cambridge University Press:  28 February 2011

G. M. Crean ,
S. Lyncrt ,
R. Greef ,
J. Stoemenos ,
U. Rossow  and
W. Richter
G. M. Crean
Affiliation:
National Microelectronics Research Centre, Prospect Row, Cork, Ireland
S. Lyncrt
Affiliation:
National Microelectronics Research Centre, Prospect Row, Cork, Ireland
R. Greef
Affiliation:
Department of Chemistry, Southampton University, Southampton, U.K.
J. Stoemenos
Affiliation:
Department of Physics, Thessaloniki University, Thessaloniki, Greece
U. Rossow
Affiliation:
Department of Physics, Technical University, Berlin, Germany
W. Richter
Affiliation:
Department of Physics, Technical University, Berlin, Germany
Get access

Abstract

One of the most promising silicon on insulator (SOI) fabrication techniques under development is Separation by IMplanted OXygen (SIMOX) substrates. The objective of this paper is to evaluate the feasability of employing spectroscopic ellipsometry (SE) for the determination of SIMOX substrate quality. Defect density measurements obtained from planar view transmission electron microscopy (TEM) studies are presented and concur with the Raman experimental results. The need for the development of a more sophisticated ellipsometric optical response model to mirror the complexity of the annealed Si overlayer microstructure is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 139
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Cullen, G.W. and Duffy, M.T., Proc. 4th Inter. Symp. on SOI Technology and Devices, Pennington, New York (1990) pp. 10.Google Scholar
[2] Pinzzotto, R.F., J. Cryst. Growth, 63, 559 (1983).CrossRefGoogle Scholar
[3] Lam, H.W., IEEE Circuits Device Mag., 3, 6 (1987).CrossRefGoogle Scholar
[4] Guerra, M.A., Solid State Technology, 75 (1990).Google Scholar
[5] Duffy, M.T., Cullen, G.W., Ipri, A., Jastrzebski, L. and Shell, W., Proc. 4th Inter. Symp. on SOI Technology and Devices, Pennington, New York (1990) pp. 288.Google Scholar
[6] Izumi, K., Doken, M. and Ariyoshi, M., Electron Lett, 14, 593 (1978).CrossRefGoogle Scholar
[7] Lynch, S., Crean, G.M., Greef, R., Margail, J., Lamure, J.M. and Stoemenos, J., Proc. E-MRS Symp. on Ion Beam Synthesis of Compound and Elemental Layers, Spring Conference, Strasbourg, France (1991) Elsevier Press.Google Scholar
[8] Lowe, A.C., Surf. Sci., 56, 134 (1976).CrossRefGoogle Scholar
[9] Margail, J., Lamure, L.M. and Papon, A.M., Proc. E-MRS Symp. on Ion Beam Synthesis of Compound and Elemental Layers, Spring Conference, Strasbourg, France (1991) Elsevier Press.Google Scholar
[10] Stoemenos, J. and Margail, J., Thin Solid Films, 135, 115 (1986).CrossRefGoogle Scholar
[11] Vanhellemont, J. and Claeys, C., J. Appl. Phys., 62, 3960 (1987).CrossRefGoogle Scholar
[12] Stoemenos, J., Reeson, K.J., Robinson, K. and Hemment, P.L.F., J. Appl. Phys., 69, 793 (1991).CrossRefGoogle Scholar
[13] Finch, R.H., Queisser, H.J., Thomas, G. and Washburn, J., J. Appl. Phys., 34, 406 (1963).CrossRefGoogle Scholar
[14] Booker, G.R. and Stickler, R., J. Appl. Phys., 33, 3281 (1962).CrossRefGoogle Scholar
[15] Bruggeman, D.A.M., Ann. Phys. Lpz., 24, 636 (1935).CrossRefGoogle Scholar
[16] Vanhellemont, J. and Maes, H.E., Material Science and Engineering, B5, 355 (1990).Google Scholar
[17] Meiron, J., Opt. Soc. Am., 51, 1105 (1965).CrossRefGoogle Scholar
[18] Thomas, A., Zahn, D.R.T., Grootzschel, R., Klabes, R. and Richter, W., Semicond. Sci. and Tech. (to be published). Google Scholar
[19] Shaw, D., Atomic Diffusion in Semiconductors, (Plenum, New York (1973) pp. 46.CrossRefGoogle Scholar
[20] Richter, W., in Springer Tracts in Modern Physics, edited by Hoehler, G. (Springer Verlag, Berlin, 1976).Google Scholar
[21] Crean, G.M., “Photon Probes For in Process Control During Semiconductor Fabrication” in Photochemical Processing of Electronic Materials, edited by Boyd, I. W. and Jackman, R.B. (Academic Press, 1992) pp. 501 - 528.Google Scholar